Choi Jinnil, Chung Myung-Ho, Dong Ki-Young, Park Eun-Mi, Ham Dae-Jin, Park YunKwon, Song In Sang, Pak James Jungho, Ju Byeong-Kwon
Display and Nanosystem Lab., College of Engineering, Korea University, Seoul 136-713, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):778-81. doi: 10.1166/jnn.2011.3281.
Nanoscale patterns are fabricated by laser interference lithography (LIL) using Lloyd's mirror interferometer. LIL provides a patterning technology with simple, quick process over a large area without the usage of a mask. Effects of various key parameters for LIL, with 257 nm wavelength laser, are investigated, such as the exposure dosage, the half angle of two incident beams at the intersection, and the power of the light source for generating one or two dimensional (line and dot) nanoscale structures. The uniform dot patterns over an area of 20 mm x 20 mm with the half pitch sizes of around 190, 250, and 370 nm are achieved and by increasing the beam power up to 0.600 mW/cm2, the exposure process time was reduced down to 12/12 sec for the positive photoresist DHK-BF424 (DongJin) over a bare silicon substrate. In addition, bottom anti-reflective coating (DUV-30J, Brewer Science) is applied to confirm improvements for line structures. The advantages and limitations of LIL are highlighted for generating nanoscale patterns.
纳米级图案是使用劳埃德镜干涉仪通过激光干涉光刻（LIL）制造的。LIL提供了一种无需使用掩膜即可在大面积上进行简单、快速加工的图案化技术。研究了使用257nm波长激光时LIL的各种关键参数的影响，如曝光剂量、两束入射光在相交处的半角以及用于生成一维或二维（线和点）纳米级结构的光源功率。在20mm×20mm的区域内实现了半间距尺寸约为190、250和370nm的均匀点图案，通过将光束功率提高到0.600mW/cm2，在裸硅衬底上对正性光刻胶DHK-BF424（东进）的曝光处理时间缩短至12/12秒。此外，应用底部抗反射涂层（DUV-30J，布鲁尔科学公司）以确认对线结构的改进。突出了LIL在生成纳米级图案方面的优点和局限性。
