Gao Yuan, Wang Ka, Song Haizeng, Wu Han, Yan Shancheng, Xu Xin, Shi Yi
School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China.
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
J Nanosci Nanotechnol. 2020 Apr 1;20(4):2628-2632. doi: 10.1166/jnn.2020.17330.
As a new topological insulator material, the -phase silver telluride (Ag₂Te) nanowire is a narrow bandgap semiconductor, which is attractive for its excellent properties. In this study, Ag₂Te nanowires were synthesized by one-step hydrothermalmethod. The nanowires showed good electrical properties with maximum drain-source voltage of 1.5 V, and the output current was up to 20 A. The gate voltage has a significant effect on output current for the device. The Ag₂Te nanowires will have more extensive and in-depth applications in the fields of optoelectronics and thermoelectricity.