Chang Tsu-Chi, Hong Kuo-Bin, Kuo Shuo-Yi, Lu Tien-Chang
Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
Sci Rep. 2019 Sep 10;9(1):13055. doi: 10.1038/s41598-019-49604-0.
We reported on GaN microcavity (MC) lasers combined with one rigid TiO high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.
我们报道了一种氮化镓微腔(MC)激光器,其将一种刚性二氧化钛高对比度光栅(HCG)结构用作输出镜。该HCG结构直接制作在氮化镓结构上,没有气隙。整个MC结构包括一个底部介质分布式布拉格反射器、一个氮化镓腔以及一个顶部HCG反射器,后者被设计用于产生对横向磁(TM)极化光或横向电(TE)极化光的高反射率。当在室温下使用HCG结构进行脉冲光泵浦时,该MC器件显示出约0.79兆瓦/平方厘米的工作阈值。激光发射为TM极化,极化度为99.2%,并且具有14°的小发散角(半高宽)。这种采用HCG的基于氮化镓的MC结构的激光操作演示展示了HCG在从绿色到紫外波长的半导体激光器中的优势。