Gupta Renu, Bhatti Imtiaz Noor, Pramanik A K
School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India.
J Phys Condens Matter. 2020 Jan 16;32(3):035803. doi: 10.1088/1361-648X/ab49a1. Epub 2019 Oct 1.
Here, we report an evolution of structural, magnetic and transport behavior in doped SrRu Ga O (x [Formula: see text] 0.2). The nonmagnetic dopant Ga (3d ) not only acts for magnetic site dilution in SrRuO but also modifies the Ru charge state and electronic density. Our studies show that Ga substitution does not affect the original orthorhombic- Pbnm structure of SrRuO which is due to its matching ionic radii with Ru . However, Ga has a substantial effect on the magnetic behavior of SrRuO where it decreases both magnetic moment as well as magnetic transition temperature [Formula: see text]. Further, this dilution induces Griffiths phase behavior across [Formula: see text] and cluster-glass behavior at low temperature with higher concentration of doping. The magnetic critical exponent [Formula: see text] increases with x due to this site dilution effect. The Ga induces an insulating state in SrRuO with x > 0.05. The charge transport in paramagnetic as well as in insulating state of samples can be well described with Mott's modified variable-range-hopping model. The metallic charge transport just below [Formula: see text] in SrRuO obeys Fermi liquid behavior which breaks down at low temperature. We further find a correlation between field dependent magnetoresistance and magnetization through power-law behavior over the series.
在此,我们报道了掺杂的SrRuGaO(x[公式:见正文]0.2)中结构、磁性和输运行为的演变。非磁性掺杂剂Ga(3d)不仅在SrRuO中起到磁性位点稀释的作用,还改变了Ru的电荷状态和电子密度。我们的研究表明,Ga取代不会影响SrRuO原本的正交晶系-Pbnm结构,这是由于其离子半径与Ru相匹配。然而,Ga对SrRuO的磁性行为有显著影响,它降低了磁矩以及磁转变温度[公式:见正文]。此外,这种稀释在[公式:见正文]范围内诱导出格里菲斯相行为,并在低温下、较高掺杂浓度时诱导出团簇玻璃行为。由于这种位点稀释效应,磁临界指数[公式:见正文]随x增加。当x > 0.05时,Ga在SrRuO中诱导出绝缘态。样品顺磁态以及绝缘态下的电荷输运可以用莫特修正的变程跳跃模型很好地描述。SrRuO中刚好低于[公式:见正文]的金属电荷输运遵循费米液体行为,该行为在低温下失效。我们还通过该系列中的幂律行为发现了场依赖磁电阻与磁化之间的相关性。