Institute of Materials for Electronics and Energy Technology (i-MEET), Department of Materials Science and Engineering , Friedrich-Alexander-Universität Erlangen-Nürnberg , Martensstr. 7 , 91058 Erlangen , Germany.
Erlangen Graduate School in Advanced Optical Technologies (SAOT) , Friedrich-Alexander-Universität Erlangen-Nürnberg , Paul-Gordan-Str. 6 , 91052 Erlangen , Germany.
ACS Appl Mater Interfaces. 2019 Oct 23;11(42):39018-39025. doi: 10.1021/acsami.9b14788. Epub 2019 Oct 15.
Controllably manipulating the spectral response of broadband-absorbing semiconductors is crucial for developing wavelength-selective optoelectronic devices. In this article, we report for the first time, the bias-dependent spectral responses for a metal-halide perovskite photodiode. Tunable external quantum efficiencies in the short- and long-wavelength regimes, and the full spectral range (ca. 300-800 nm) are observed when the device is operated under short-circuit, and forward and reverse bias conditions, respectively. This observation is understood by the interplay of wavelength-dependent penetration depth and barrier formation within the photodiode device stack. The general applicability of this concept is confirmed by a systematic study on a series of mixed-halide perovskite devices. These results suggest that the proposed concept allows as a promising platform and should inspire further exploration of multispectral responsive optoelectronic devices.
可控地调节宽带吸收半导体的光谱响应对于开发波长选择光电设备至关重要。在本文中，我们首次报道了金属卤化物钙钛矿光电二极管的偏置相关光谱响应。当器件在短路、正向和反向偏置条件下工作时，分别观察到短波长和长波长区域以及全光谱范围（约 300-800nm）的可调外部量子效率。这种观察结果是由光电二极管器件堆叠中波长相关的穿透深度和势垒形成的相互作用所理解的。通过对一系列混合卤化物钙钛矿器件的系统研究，证实了这一概念的普遍适用性。这些结果表明，所提出的概念提供了一个有前途的平台，应该激发对多光谱响应光电设备的进一步探索。
