Kurasaki Ayata, Tanaka Ryo, Sugisaki Sumio, Matsuda Tokiyoshi, Koretomo Daichi, Magari Yusaku, Furuta Mamoru, Kimura Mutsumi
Department of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan.
Innovative Materials and Processing Research Center, High-Tech Research Center, Ryukoku University, Seta, Otsu 520-2194, Japan.
Materials (Basel). 2019 Oct 2;12(19):3236. doi: 10.3390/ma12193236.
We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.
我们发现了一种具有不同氧密度双层结构的非晶态Ga-Sn-O（α-GTO）薄膜器件的忆阻特性。双层结构采用射频（RF）磁控溅射沉积，下层气体中的氧气含量较少，而上层气体中的氧气含量较多，并且假定前者含有更多的氧空位，而后者含有的空位较少。该特性由氧的漂移来解释，并且无需形成丝状等额外结构即可稳定运行。由于只需通过改变腔室内的氧比例就可依次沉积双层结构，所以制造过程很简单。
