Kuganathan Navaratnarajah, Kelaidis Nikolaos, Chroneos Alexander
Department of Materials, Imperial College London, London SW7 2AZ, UK.
Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB, UK.
Materials (Basel). 2019 Oct 4;12(19):3243. doi: 10.3390/ma12193243.
Minor metal-free sodium iron dioxide, NaFeO, is a promising cathode material in sodium-ion batteries. Computational simulations based on the classical potentials were used to study the defects, sodium diffusion paths and cation doping behaviour in the α- and β-NaFeO polymorphs. The present simulations show good reproduction of both α- and β-NaFeO. The most thermodynamically favourable defect is Na Frenkel, whereas the second most favourable defect is the cation antisite, in which Na and Fe exchange their positions. The migration energies suggest that there is a very small difference in intrinsic Na mobility between the two polymorphs but their migration paths are completely different. A variety of aliovalent and isovalent dopants were examined. Subvalent doping by Co and Zn on the Fe site is calculated to be energetically favourable in α- and β-NaFeO, respectively, suggesting the interstitial Na concentration can be increased by using this defect engineering strategy. Conversely, doping by Ge on Fe in α-NaFeO and Si (or Ge) on Fe in β-NaFeO is energetically favourable to introduce a high concentration of Na vacancies that act as vehicles for the vacancy-assisted Na diffusion in NaFeO. Electronic structure calculations by using density functional theory (DFT) reveal that favourable dopants lead to a reduction in the band gap.
微量无金属的二氧化钠铁(NaFeO)是钠离子电池中一种很有前景的阴极材料。基于经典势的计算模拟被用于研究α-和β-NaFeO多晶型中的缺陷、钠扩散路径和阳离子掺杂行为。目前的模拟结果显示对α-和β-NaFeO都有很好的再现。热力学上最有利的缺陷是钠弗伦克尔缺陷,而第二有利的缺陷是阳离子反位缺陷,即钠和铁交换它们的位置。迁移能表明两种多晶型之间本征钠迁移率的差异非常小,但它们的迁移路径完全不同。研究了多种异价和同价掺杂剂。计算得出,在α-和β-NaFeO中,分别在铁位点上用钴和锌进行低价掺杂在能量上是有利的,这表明使用这种缺陷工程策略可以提高间隙钠的浓度。相反,在α-NaFeO中在铁位点上用锗掺杂以及在β-NaFeO中在铁位点上用硅(或锗)掺杂在能量上有利于引入高浓度的钠空位,这些空位充当了NaFeO中钠空位辅助扩散的载体。使用密度泛函理论(DFT)进行的电子结构计算表明,有利的掺杂剂会导致带隙减小。