Kuganathan Navaratnarajah, Iyngaran Poobalasuntharam, Chroneos Alexander
Department of Materials, Imperial College London, London, SW7 2AZ, United Kingdom.
Depratment of Chemistry, University of Jaffna, Sir Pon Ramanathan Road, Thirunelvely, Jaffna, Sri Lanka.
Sci Rep. 2018 Apr 11;8(1):5832. doi: 10.1038/s41598-018-24168-7.
The anti-fluorite type LiFeO has attracted significant interest as a potential cathode material for Li ion batteries due to its high Li content and electrochemical performance. Atomic scale simulation techniques have been employed to study the defects and Li ion migration in LiFeO. The calculations suggest that the most favorable intrinsic defect type is calculated to be the cation anti-site defect, in which Li and Fe ions exchange positions. Li Frenkel is also found to be lower in this material (0.85 eV/defect). Long range lithium diffusion paths were constructed in LiFeO and it is confirmed that the lower migration paths are three dimensional with the lowest activation energy of migration at 0.45 eV. Here we show that doping by Si on the Fe site is energetically favourable and an efficient way to introduce a high concentration of lithium vacancies. The introduction of Si increases the migration energy barrier of Li in the vicinity of the dopant to 0.59 eV. Nevertheless, the introduction of Si is positive for the diffusivity as the migration energy barrier increase is lower less than that of the lithium Frenkel process, therefore the activation energy of Li diffusion.
反萤石型LiFeO因其高锂含量和电化学性能,作为锂离子电池的潜在阴极材料引起了广泛关注。原子尺度模拟技术已被用于研究LiFeO中的缺陷和锂离子迁移。计算表明,最有利的本征缺陷类型被计算为阳离子反位缺陷,即Li和Fe离子交换位置。在这种材料中还发现Li弗伦克尔缺陷的能量也较低(0.85 eV/缺陷)。在LiFeO中构建了长程锂扩散路径,证实了较低的迁移路径是三维的,最低迁移活化能为0.45 eV。在这里我们表明,在Fe位点上掺杂Si在能量上是有利的,并且是引入高浓度锂空位的有效方法。Si的引入将掺杂剂附近Li的迁移能垒提高到0.59 eV。然而,Si的引入对扩散率是有利的,因为迁移能垒的增加低于锂弗伦克尔过程,因此是Li扩散的活化能。