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MgTiO₃ 中的缺陷、掺杂剂与镁扩散

Defects, dopants and Mg diffusion in MgTiO.

作者信息

Kuganathan Navaratnarajah, Iyngaran Poobalasuntharam, Vovk Ruslan, Chroneos Alexander

机构信息

Department of Materials, Imperial College London, London, SW7 2AZ, United Kingdom.

Department of Chemistry, University of Jaffna, Sir. Pon Ramanathan Road, Thirunelvely, Jaffna, Sri Lanka.

出版信息

Sci Rep. 2019 Mar 13;9(1):4394. doi: 10.1038/s41598-019-40878-y.

Abstract

Magnesium titanate is technologically important due to its excellent dielectric properties required in wireless communication system. Using atomistic simulation based on the classical pair potentials we study the defect chemistry, Mg and O diffusion and a variety of dopant incorporation at Mg and Ti sites. The defect calculations suggest that cation anti-site defect is the most favourable defect process. The Mg Frenkel is the second most favourable intrinsic defect though the formation energy is highly endoergic. Higher overall activation energies (>3 eV) are observed for oxygen migration compared to those observed for magnesium (0.88 eV). Dopant substitution energies for a range of cations with charges varying from +2 to +4 were examined. Divalent dopants (Mn, Fe, Co, Ca and Zn) on the Mg site exhibit low solution energies. Trivalent dopants prefer to occupy Mg site though their solution energies are high. Exothermic solution energies calculated for tetravalent dopants (Ge and Si) on the Ti site suggest the necessity of experimental verification.

摘要

钛酸镁因其在无线通信系统中所需的优异介电性能而在技术上具有重要意义。我们基于经典对势使用原子模拟来研究缺陷化学、镁和氧的扩散以及在镁和钛位点上各种掺杂剂的掺入情况。缺陷计算表明阳离子反位缺陷是最有利的缺陷过程。镁弗伦克尔缺陷是第二有利的本征缺陷,尽管其形成能是高度吸热的。与镁迁移(0.88 eV)相比,观察到氧迁移的总体活化能更高(>3 eV)。研究了一系列电荷从 +2 到 +4 变化的阳离子的掺杂剂替代能。镁位点上的二价掺杂剂(锰、铁、钴、钙和锌)表现出较低的溶解能。三价掺杂剂倾向于占据镁位点,尽管它们的溶解能较高。在钛位点上四价掺杂剂(锗和硅)计算出的放热溶解能表明有必要进行实验验证。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3390/6416248/b73df6798540/41598_2019_40878_Fig1_HTML.jpg

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