Kuganathan Navaratnarajah, Kordatos Apostolos, Chroneos Alexander
Department of Materials, Imperial College London, London, SW7 2AZ, United Kingdom.
Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry, CV1 5FB, United Kingdom.
Sci Rep. 2018 Aug 22;8(1):12621. doi: 10.1038/s41598-018-30554-y.
Tin-based oxide LiSnO has attracted considerable interest as a promising cathode material for potential use in rechargeable lithium batteries due to its high- capacity. Static atomistic scale simulations are employed to provide insights into the defect chemistry, doping behaviour and lithium diffusion paths in LiSnO. The most favourable intrinsic defect type is Li Frenkel (0.75 eV/defect). The formation of anti-site defect, in which Li and Sn ions exchange their positions is 0.78 eV/defect, very close to the Li Frenkel. The present calculations confirm the cation intermixing found experimentally in LiSnO. Long range lithium diffusion paths via vacancy mechanisms were examined and it is confirmed that the lowest activation energy migration path is along the c-axis plane with the overall activation energy of 0.61 eV. Subvalent doping by Al on the Sn site is energetically favourable and is proposed to be an efficient way to increase the Li content in LiSnO. The electronic structure calculations show that the introduction of Al will not introduce levels in the band gap.
锡基氧化物LiSnO因其高容量而作为一种有潜力用于可充电锂电池的阴极材料引起了广泛关注。采用静态原子尺度模拟来深入了解LiSnO中的缺陷化学、掺杂行为和锂扩散路径。最有利的本征缺陷类型是锂弗伦克尔缺陷(0.75电子伏特/缺陷)。锂和锡离子交换位置的反位缺陷形成能为0.78电子伏特/缺陷,与锂弗伦克尔缺陷非常接近。目前的计算证实了在LiSnO中实验发现的阳离子混合现象。研究了通过空位机制的长程锂扩散路径,证实最低活化能迁移路径沿c轴平面,总活化能为0.61电子伏特。在锡位点上用铝进行低价掺杂在能量上是有利的,并且被认为是增加LiSnO中锂含量的有效方法。电子结构计算表明,铝的引入不会在带隙中引入能级。