• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

掺钨和未掺钨的纳米晶VO粉末的滞后热性能测量。

Measurement of the hysteretic thermal properties of W-doped and undoped nanocrystalline powders of VO.

作者信息

Gomez-Heredia C L, Ramirez-Rincon J A, Bhardwaj D, Rajasekar P, Tadeo I J, Cervantes-Lopez J L, Ordonez-Miranda J, Ares O, Umarji A M, Drevillon J, Joulain K, Ezzahri Y, Alvarado-Gil J J

机构信息

Departamento de Física Aplicada, Cinvestav-Unidad Mérida, Carretera Antigua a Progreso km. 6, 97310, Mérida, Yucatán, Mexico.

Materials Research Centre, Indian Institute of Science, 560012, Bengaluru, India.

出版信息

Sci Rep. 2019 Oct 11;9(1):14687. doi: 10.1038/s41598-019-51162-4.

DOI:10.1038/s41598-019-51162-4
PMID:31604979
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6789116/
Abstract

Hysteresis loops exhibited by the thermal properties of undoped and 0.8 at.% W-doped nanocrystalline powders of VO synthesized by means of the solution combustion method and compacted in pellets, are experimentally measured by photothermal radiometry. It is shown that: (i) the W doping reduces both the hysteresis loops of VO and its transition temperature up to 15 °C. (ii) The thermal diffusivity decreases (increases) until (after) the metallic domains become dominant in the VO insulating matrix, such that its variation across the metal-insulation transition is enhanced by 23.5% with W-0.8 at.% doping. By contrast, thermal conductivity (thermal effusivity) increases up to 45% (40%) as the metallic phase emerges in the VO structure due to the insulator-to-metal transition, and it enhances up to 11% (25%) in the insulator state when the local rutile phase is induced by the tungsten doping. (iii) The characteristic peak of the VO specific heat capacity is observed in both heating and cooling processes, such that the phase transition of the 0.8 at.% W-doped sample requires about 24% less thermal energy than the undoped one. (iv) The impact of the W doping on the four above-mentioned thermal properties of VO mainly shows up in its insulator phase, as a result of the distortion of the local lattice induced by the electrons of tungsten. W doping at 0.8 at.% thus enhances the VO capability to transport heat but diminishes its thermal switching efficiency.

摘要

通过溶液燃烧法合成并压制成丸粒的未掺杂和0.8原子%W掺杂的VO纳米晶粉末的热性质所呈现的磁滞回线,采用光热辐射测量法进行了实验测量。结果表明:(i)W掺杂降低了VO的磁滞回线及其转变温度,降幅高达15°C。(ii)在VO绝缘基体中金属畴占主导之前(之后),热扩散率降低(增加),使得在0.8原子%W掺杂时,其在金属-绝缘转变过程中的变化增强了23.5%。相比之下,由于绝缘体-金属转变,当VO结构中出现金属相时,热导率(热惯量)增加高达45%(40%),并且当钨掺杂诱导局部金红石相时,在绝缘状态下热导率(热惯量)增强高达11%(25%)。(iii)在加热和冷却过程中均观察到VO比热容的特征峰,使得0.8原子%W掺杂样品的相变所需的热能比未掺杂样品少约24%。(iv)W掺杂对VO上述四种热性质的影响主要出现在其绝缘相中,这是由钨电子引起的局部晶格畸变导致的。因此,0.8原子%的W掺杂提高了VO的热传输能力,但降低了其热开关效率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/a98ae777da00/41598_2019_51162_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/f2fb5e71b99b/41598_2019_51162_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/d0f390916ed3/41598_2019_51162_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/cc728ec6c221/41598_2019_51162_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/9f09de191af3/41598_2019_51162_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/6539ed863391/41598_2019_51162_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/6637b55cf2d0/41598_2019_51162_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/c1b5dbc6277c/41598_2019_51162_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/d3cd96dfb798/41598_2019_51162_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/814e9f3dd66d/41598_2019_51162_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/da96be329bdc/41598_2019_51162_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/88891e829824/41598_2019_51162_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/8524312c5a9f/41598_2019_51162_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/a98ae777da00/41598_2019_51162_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/f2fb5e71b99b/41598_2019_51162_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/d0f390916ed3/41598_2019_51162_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/cc728ec6c221/41598_2019_51162_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/9f09de191af3/41598_2019_51162_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/6539ed863391/41598_2019_51162_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/6637b55cf2d0/41598_2019_51162_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/c1b5dbc6277c/41598_2019_51162_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/d3cd96dfb798/41598_2019_51162_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/814e9f3dd66d/41598_2019_51162_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/da96be329bdc/41598_2019_51162_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/88891e829824/41598_2019_51162_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/8524312c5a9f/41598_2019_51162_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a4a/6789116/a98ae777da00/41598_2019_51162_Fig13_HTML.jpg

相似文献

1
Measurement of the hysteretic thermal properties of W-doped and undoped nanocrystalline powders of VO.掺钨和未掺钨的纳米晶VO粉末的滞后热性能测量。
Sci Rep. 2019 Oct 11;9(1):14687. doi: 10.1038/s41598-019-51162-4.
2
Thermophysical characterisation of VO thin films hysteresis and its application in thermal rectification.VO薄膜的热物理特性、滞后现象及其在热整流中的应用。
Sci Rep. 2019 Jun 19;9(1):8728. doi: 10.1038/s41598-019-45436-0.
3
Sol-Gel Derived Tungsten Doped VO Thin Films on Si Substrate with Tunable Phase Transition Properties.硅衬底上溶胶-凝胶法制备掺杂钨的 VO 薄膜及其可调相变特性。
Molecules. 2023 Apr 27;28(9):3778. doi: 10.3390/molecules28093778.
4
Orbital change manipulation metal-insulator transition temperature in W-doped VO2.通过轨道变化调控W掺杂VO₂中的金属-绝缘体转变温度。
Phys Chem Chem Phys. 2015 May 7;17(17):11638-46. doi: 10.1039/c4cp04889j.
5
Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.掺杂 VO2 纳米线中单斜四方相(金红石)转变的原子起源。
Nano Lett. 2015 Nov 11;15(11):7179-88. doi: 10.1021/acs.nanolett.5b03219. Epub 2015 Oct 16.
6
Thermal Conductivity of VO Nanowires at Metal-Insulator Transition Temperature.金属-绝缘体转变温度下VO纳米线的热导率
Nanomaterials (Basel). 2021 Sep 17;11(9):2428. doi: 10.3390/nano11092428.
7
Lowered phase transition temperature and excellent solar heat shielding properties of well-crystallized VO by W doping.通过W掺杂降低了结晶良好的VO的相变温度并具有优异的太阳隔热性能。
Phys Chem Chem Phys. 2016 Oct 12;18(40):28010-28017. doi: 10.1039/c6cp05143j.
8
Doubling of the Phase Transition Temperature of VO by Fe Doping.通过铁掺杂使VO的相变温度加倍。
J Phys Chem Lett. 2021 Aug 19;12(32):7792-7796. doi: 10.1021/acs.jpclett.1c02179. Epub 2021 Aug 10.
9
Axially engineered metal-insulator phase transition by graded doping VO2 nanowires.梯度掺杂 VO2 纳米线的轴向工程金属-绝缘相变。
J Am Chem Soc. 2013 Mar 27;135(12):4850-5. doi: 10.1021/ja400658u. Epub 2013 Mar 18.
10
Stabilization of the VO(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WVO Thin Films.WVO薄膜相变温度下VO(M2)相的稳定性及晶格参数变化
ACS Appl Mater Interfaces. 2023 Nov 8;15(44):51606-51616. doi: 10.1021/acsami.3c11484. Epub 2023 Oct 24.

引用本文的文献

1
Fully printed doped vanadium dioxide (M) nanoparticles-based temperature sensor with enhanced sensitivity for reliable environmental monitoring using packaging strategy.基于全印刷掺杂二氧化钒(M)纳米颗粒的温度传感器,采用封装策略提高灵敏度以实现可靠的环境监测。
Sci Rep. 2025 Apr 10;15(1):12309. doi: 10.1038/s41598-025-95417-9.
2
Passive temperature sensing through chipless vanadium dioxide metasurface tags.通过无芯片二氧化钒超表面标签实现被动温度传感。
Sci Rep. 2024 Dec 30;14(1):31753. doi: 10.1038/s41598-024-82874-x.
3
Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films.

本文引用的文献

1
Black phosphorus analogue tin sulfide nanosheets: synthesis and application as near-infrared photothermal agents and drug delivery platforms for cancer therapy.类黑磷硫化锡纳米片:作为用于癌症治疗的近红外光热剂和药物递送平台的合成与应用
J Mater Chem B. 2018 Aug 7;6(29):4747-4755. doi: 10.1039/c8tb00729b. Epub 2018 Jun 26.
2
Thermophysical characterisation of VO thin films hysteresis and its application in thermal rectification.VO薄膜的热物理特性、滞后现象及其在热整流中的应用。
Sci Rep. 2019 Jun 19;9(1):8728. doi: 10.1038/s41598-019-45436-0.
3
Thermal hysteresis measurement of the VO emissivity and its application in thermal rectification.
未掺杂和钨掺杂二氧化钒薄膜的光学、电学、结构和热机械性能
Materials (Basel). 2024 May 16;17(10):2382. doi: 10.3390/ma17102382.
4
Hysteresis in Heat Capacity of MWCNTs Caused by Interface Behavior.由界面行为引起的多壁碳纳米管热容量中的滞后现象。
Nanomaterials (Basel). 2022 Sep 10;12(18):3139. doi: 10.3390/nano12183139.
5
Facile Solution Process of VO Film with Mesh Morphology for Enhanced Thermochromic Performance.具有网状形态的VO薄膜的简便溶液法制备及其增强的热致变色性能
Materials (Basel). 2022 Jun 10;15(12):4129. doi: 10.3390/ma15124129.
6
High quality VO thin films synthesized from VO powder for sensitive near-infrared detection.由氧化钒粉末合成的高质量氧化钒薄膜用于灵敏的近红外探测。
Sci Rep. 2021 Nov 5;11(1):21749. doi: 10.1038/s41598-021-01025-8.
氧化钒发射率的热滞回线测量及其在热整流中的应用。
Sci Rep. 2018 May 31;8(1):8479. doi: 10.1038/s41598-018-26687-9.
4
Electrical Switching in Semiconductor-Metal Self-Assembled VO Disordered Metamaterial Coatings.半导体-金属自组装 VO 无序金属膜涂层中的电开关。
Sci Rep. 2016 Nov 24;6:37699. doi: 10.1038/srep37699.
5
Shape-controlled synthesis and influence of W doping and oxygen nonstoichiometry on the phase transition of VO2.形状控制合成以及W掺杂和氧非化学计量对VO₂相变的影响
Sci Rep. 2015 Sep 16;5:14087. doi: 10.1038/srep14087.
6
Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti(4+)) Doping.通过钛(Ti(4+))掺杂解耦晶格畸变和电荷掺杂对VO₂相变行为的影响。
Sci Rep. 2015 May 7;5:9328. doi: 10.1038/srep09328.
7
Depressed transition temperature of W(x)V(1-x)O2: mechanistic insights from the X-ray absorption fine structure (XAFS) spectroscopy.W(x)V(1 - x)O₂的转变温度降低:基于X射线吸收精细结构(XAFS)光谱的机理洞察
Phys Chem Chem Phys. 2014 Sep 7;16(33):17705-14. doi: 10.1039/c4cp01661k.
8
The phase transition of W-doped VO2 nanoparticles synthesized by an improved thermolysis method.通过改进的热分解法合成的掺钨二氧化钒纳米颗粒的相变
J Nanosci Nanotechnol. 2013 Feb;13(2):1543-8. doi: 10.1166/jnn.2013.5988.
9
Theoretical study on the tungsten-induced reduction of transition temperature and the degradation of optical properties for VO2.钨诱导 VO2 相变温度降低和光学性质退化的理论研究。
J Chem Phys. 2013 Mar 21;138(11):114705. doi: 10.1063/1.4795431.
10
Metal-insulator transition in V(1-x)W(x)O2: structural and electronic origin.V(1-x)W(x)O2 中的金属-绝缘转变:结构和电子起源。
Phys Chem Chem Phys. 2012 Nov 21;14(43):15021-8. doi: 10.1039/c2cp42313h. Epub 2012 Oct 4.