Opt Lett. 2019 Nov 1;44(21):5117-5120. doi: 10.1364/OL.44.005117.
Gallium indium phosphide (GaInP), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide (0.2×11×1300 μm) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed (-34 dB), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.
镓铟磷（GaInP）与砷化镓晶格匹配，具有显著的二阶非线性特性，以及由于其直接带隙而产生的强光致发光（PL）。通过测量 GaInP 微波导（0.2×11×1300 μm）在刺激本征光漂白前后的二次谐波产生，我们证明 PL 可以被强烈抑制（-34 dB），而不改变非线性特性，使其适用于低噪声应用。
