Visser Dennis, Désières Yohan, Swillo Marcin, De Luca Eleonora, Anand Srinivasan
Department of Applied Physics, KTH Royal Institute of Technology, Electrum 229, 164 40, Kista, Sweden.
University Grenoble Alpes, CEA, LETI, MINATEC Campus, 38054, Grenoble, France.
Sci Rep. 2020 Dec 22;10(1):22368. doi: 10.1038/s41598-020-79498-2.
Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial GaInP/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~ 660 nm) light, respectively. It is shown that (embedded) 1 μm-high GaInP nanowire arrays can be designed to absorb ~ 100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~ 24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.
研究了在具有红色光谱区域带隙发射的GaInP中制造的（锥形）纳米线阵列的颜色转换，前景是使用蓝色和绿色源光LED。采用自上而下图案转移方法制造的GaInP纳米和微结构，源自具有预定层厚度的外延GaInP/GaAs堆栈。通过选择性蚀刻GaAs牺牲层获得的无衬底GaInP微结构和纳米结构，然后嵌入透明薄膜中，以生成用于分光光度法和光致发光实验的独立颜色转换薄膜。使用时域有限差分模拟和分光光度法测量来设计和验证嵌入（独立）透明薄膜中的GaInP结构，以实现最大光吸收以及分别将蓝色（450 nm）和绿色（532 nm）光转换为红色（660 nm）光。结果表明，（嵌入的）1μm高的GaInP纳米线阵列可以设计为吸收100%的450 nm和532 nm波长的入射光。使用405 nm和532 nm激光激发进行的室温光致发光测量用于对嵌入的GaInP结构的颜色转换进行原理验证演示。（锥形）GaInP纳米线阵列尽管填充因子非常低（~24%），但由于源光和发射光分别具有更好的内耦合和外耦合，其性能可以优于微阵列和块状平板。
