Istituto di Struttura della Materia, CNR, Via Salaria km 29.300, Monterotondo Scalo, Roma, 00015, Italy.
Nanoscale. 2019 Nov 21;11(45):21891-21899. doi: 10.1039/c9nr06866j.
Thin film stacks consisting of multiple repeats M of synthetic antiferromagnetic (SAF) [Co/Pd]N/Ru/[Co/Pd]N units with perpendicular magnetic anisotropy were explored as potential starting materials to fabricate free-standing micro/nanodisks, which represent a promising candidate system for theranostic applications. The films were directly grown on a sacrificial resist layer spin-coated on SiOx/Si(100) substrates, required for the preparation of free-standing disks after its dissolution. Furthermore, the film stack was sandwiched between two Au layers to allow further bio-functionalization. For M ≤ 5, the samples fulfill all the key criteria mandatory for biomedical applications, i.e., zero remanence, zero field susceptibility at small fields and sharp switching to saturation, together with the ability to vary the total magnetic moment at saturation by changing the number of repetitions of the multi-stack. Moreover, the samples show strong perpendicular magnetic anisotropy, which is required for applications relying on the transduction of a mechanical force through the micro/nano-disks under a magnetic field, such as the mechanical cell disruption, which is nowadays considered a promising alternative to the more investigated magnetic hyperthermia approach for cancer treatment. In a further step, SAF microdisks were prepared from the continuous multi-stacks by combining electron beam lithography and Ar ion milling, revealing similar magnetic properties as compared to the continuous films.
由多个具有垂直磁各向异性的合成反铁磁(SAF)[Co/Pd]N/Ru/[Co/Pd]N 单元重复 M 次组成的薄膜堆叠被探索作为制造独立微/纳米盘的潜在起始材料,这是一种有前途的治疗诊断应用候选系统。这些薄膜直接在涂有牺牲层的抗蚀剂上生长,该抗蚀剂涂覆在 SiOx/Si(100) 衬底上,是制备独立磁盘所需的,在其溶解后可制备独立磁盘。此外,薄膜堆叠被夹在两层 Au 层之间,以允许进一步的生物功能化。对于 M ≤ 5,样品满足生物医学应用所需的所有关键标准,即零剩磁、小场下的零场磁导率和对饱和的急剧切换,以及通过改变多层堆叠的重复次数来改变饱和时的总磁矩的能力。此外,样品表现出强的垂直磁各向异性,这是依赖于磁场下微/纳米盘的机械力转换的应用所必需的,例如机械细胞破坏,这是目前被认为是更具前景的癌症治疗磁性热疗方法的替代方法。在进一步的步骤中,通过结合电子束光刻和 Ar 离子铣削,从连续的多层堆叠中制备出 SAF 微盘,与连续薄膜相比,它们具有相似的磁性。