通过界面工程实现外延BCT/BZT异质结构的大储能密度性能

Large energy storage density performance of epitaxial BCT/BZT heterostructures via interface engineering.

作者信息

Sharma Amrit P, Pradhan Dhiren K, Pradhan Sangram K, Bahoura Messaoud

机构信息

Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA, 23504, USA.

Geophysical Laboratory, Carnegie Institution for Science, Washington D.C., 20015, USA.

出版信息

Sci Rep. 2019 Nov 14;9(1):16809. doi: 10.1038/s41598-019-53358-0.

We grew lead-free BaZrTiO (BZT)/BaCaTiO (BCT) epitaxial heterostructures and studied their structural, dielectric, ferroelectric and energy density characteristics. The BZT/BCT epitaxial heterostructures were grown on SrRuO (SRO) buffered SrTiO (STO) single crystal substrate by optimized pulsed laser deposition (PLD) technique. These high-quality nanostructures exhibit high dielectric permittivity (∼1300), slim electric field-dependent polarization (P-E) curve with high saturation polarization (∼100 µC/cm) and low remnant polarization (∼20 µC/cm) through interface engineering to develop new lead-free ferroelectric system for energy storage devices. We observe an ultrahigh discharge and charge energy densities of 42.10 and 97.13 J/cm, respectively, with high efficiency, which might be highly promising for both high power and energy storage electrical devices.

我们生长了无铅的锆钛酸钡（BZT）/钛酸钡钙（BCT）外延异质结构，并研究了它们的结构、介电、铁电和能量密度特性。通过优化的脉冲激光沉积（PLD）技术，在钌酸锶（SRO）缓冲的钛酸锶（STO）单晶衬底上生长了BZT/BCT外延异质结构。通过界面工程开发用于储能器件的新型无铅铁电系统，这些高质量的纳米结构表现出高介电常数（约1300）、具有高饱和极化（约100 μC/cm）和低剩余极化（约20 μC/cm）的窄电场依赖极化（P-E）曲线。我们分别观察到42.10和97.13 J/cm的超高放电和充电能量密度，且效率很高，这对于高功率和储能电气设备可能非常有前景。