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通过界面工程调控绝缘磁性氧化物中的Dzyaloshinskii-Moriya相互作用和自旋霍尔拓扑霍尔效应

Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering.

作者信息

Xu Zedong, Zhu Yuanmin, Wang Yuming, Li Xiaowen, Liu Qi, Chen Kai, Wang Junling, Jiang Yong, Chen Lang

机构信息

Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, China.

School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, 523808, China.

出版信息

Adv Sci (Weinh). 2024 Sep;11(34):e2403852. doi: 10.1002/advs.202403852. Epub 2024 Jul 10.

Abstract

Chiral spin textures, as exotic phases in magnetic materials, hold immense promise for revolutionizing logic, and memory applications. Recently, chiral spin textures have been observed in centrosymmetric magnetic insulators (FMI), due to an interfacial Dzyaloshinskii-Moriya interaction (iDMI). However, the source and origin of this iDMI remain enigmatic in magnetic insulator systems. Here, the source and origin of the iDMI in Pt/YFeO (YIG)/substrate structures are deeply delved by examining the spin-Hall topological Hall effect (SH-THE), an indication of chiral spin textures formed due to an iDMI. Through carefully modifying the interfacial chemical composition of Pt/YIG/substrate with a nonmagnetic Al doping, the obvious dependence of SH-THE on the interfacial chemical composition for both the heavy metal (HM)/FMI and FMI/substrate interfaces is observed. The results reveal that both interfaces contribute to the strength of the iDMI, and the iDMI arises due to strong spin-orbit coupling and inversion symmetry breaking at both interfaces in HM/FMI/substrate. Importantly, it is shown that nonmagnetic substitution and interface engineering can significantly tune the SH-THE and iDMI in ferrimagnetic iron garnets. The approach offers a viable route to tailor the iDMI and associated chiral spin textures in low-damping insulating magnetic oxides, thus advancing the field of spintronics.

摘要

手性自旋纹理作为磁性材料中的奇异相,在革新逻辑和存储应用方面具有巨大潜力。最近,由于界面Dzyaloshinskii-Moriya相互作用(iDMI),在手性对称磁性绝缘体(FMI)中观察到了手性自旋纹理。然而,在磁性绝缘体系统中,这种iDMI的来源和起因仍然是个谜。在此,通过研究自旋霍尔拓扑霍尔效应(SH-THE),深入探究了Pt/YFeO(YIG)/衬底结构中iDMI的来源和起因,SH-THE是由iDMI形成的手性自旋纹理的一种表现。通过用非磁性Al掺杂仔细修改Pt/YIG/衬底的界面化学成分,观察到SH-THE对重金属(HM)/FMI和FMI/衬底界面的界面化学成分都有明显的依赖性。结果表明,两个界面都对iDMI的强度有贡献,并且iDMI是由于HM/FMI/衬底中两个界面处的强自旋轨道耦合和反演对称性破缺而产生的。重要的是,研究表明非磁性取代和界面工程可以显著调节亚铁磁性铁石榴石中的SH-THE和iDMI。该方法为在低阻尼绝缘磁性氧化物中定制iDMI和相关的手性自旋纹理提供了一条可行的途径,从而推动了自旋电子学领域的发展。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b3c4/11425861/6464c12a99f3/ADVS-11-2403852-g002.jpg

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