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通过晶体工程对垂直磁化外延多层膜中的界面 Dzyaloshinskii-Moriya 相互作用进行剪裁。

Tailoring of the Interfacial Dzyaloshinskii-Moriya Interaction in Perpendicularly Magnetized Epitaxial Multilayers by Crystal Engineering.

机构信息

Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing100083, China.

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, China.

出版信息

J Phys Chem Lett. 2023 Jan 26;14(3):637-644. doi: 10.1021/acs.jpclett.2c03543. Epub 2023 Jan 12.

DOI:10.1021/acs.jpclett.2c03543
PMID:36634038
Abstract

The interplay between the interfacial crystalline structure and Dzyaloshinskii-Moriya interaction (DMI) was investigated by Fe insertion in epitaxial Pt/Co/Ir perpendicular magnetized multilayers. The experimental results with the support of first-principles calculation indicate that the Fe/Ir interface exhibits a positive interfacial DMI (iDMI) originating from the fcc crystalline structure inserted by 2 monolayers (ML) Fe, while a negative one from the structure with a layer shifting of 1-ML Fe insertion. The total iDMI of the multilayers increases (decreases) due to the additive enhancement (competitive counteraction) between the iDMI of Fe/Ir and Pt/Co interfaces. Comparing the iDMI of single-crystalline and textured multilayers, the iDMI of multilayers is found to be particularly sensitive to the crystallinity nearby the heterointerfaces. This work is of vital importance to reveal a deeper insight into the physical mechanism of the iDMI and provides a viable strategy for tailoring the iDMI of the multilayers by crystal engineering.

摘要

通过在外延 Pt/Co/Ir 垂直磁化多层膜中插入 Fe,研究了界面结晶结构和 Dzyaloshinskii-Moriya 相互作用(DMI)之间的相互作用。实验结果得到第一性原理计算的支持表明,Fe/Ir 界面表现出正的界面 DMI(iDMI),源于插入 2 个单层(ML)Fe 的 fcc 结晶结构,而来自插入 1-ML Fe 的结构层移则表现出负的 iDMI。由于 Fe/Ir 和 Pt/Co 界面的 iDMI 的附加增强(竞争拮抗),多层膜的总 iDMI 增加(减少)。比较单晶和织构化多层膜的 iDMI 发现,多层膜的 iDMI 特别敏感于异质界面附近的结晶度。这项工作对于揭示 iDMI 的物理机制具有重要意义,并为通过晶体工程来调整多层膜的 iDMI 提供了可行的策略。

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