Wang Huatao, Wu Tom
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Nanoscale Res Lett. 2012 Feb 8;7(1):110. doi: 10.1186/1556-276X-7-110.
Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices.
在此，我们介绍并概述一种通用的无光刻方法，该方法通过金属蒸汽引发的内延生长在硅和锗表面制备硅化物和锗化物微/纳米结构。通过调整衬底取向和生长参数，可以实现对形状和取向的出色控制。此外，利用硅化物/锗化物的升华，还可以在硅和锗表面成功制备出具有可控形貌的微/纳米级坑。本简要报告的目的是阐述在元素半导体表面进行无光刻合成和图案化的概念，并讨论与硅和锗表面相关的差异和挑战。我们的结果表明，这种低成本的自下而上方法在功能纳米器件应用中具有广阔前景。
