Romijn Joost, Vollebregt Sten, Middelburg Luke M, Mansouri Brahim El, van Zeijl Henk W, May Alexander, Erlbacher Tobias, Leijtens Johan, Zhang Guoqi, Sarro Pasqualina M
Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, Delft, The Netherlands.
Fraunhofer Institute for Integrated Systems and Devices Technology IISB, Erlangen, Germany.
Microsyst Nanoeng. 2022 Oct 25;8:114. doi: 10.1038/s41378-022-00446-3. eCollection 2022.
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.
这项工作展示了4H-SiC互补金属氧化物半导体中首个片上紫外光电子集成，其中包括一个具有64个有源像素的图像传感器以及在一块100毫米芯片上总共1263个晶体管。所报道的图像传感器提供串行数字、模拟和2位模数转换器输出，工作频率为0.39赫兹，最大功耗为60微瓦，相较于之前的报道有显著改进。紫外光电子技术在火焰探测、卫星、天文学、紫外摄影和医疗保健等领域有应用。这种光电子系统的复杂性为诸如恶劣环境微控制器等新应用铺平了道路。
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