Optimizing the role of impact ionization in conventional insulators.

A mechanism for multiple carrier generation through impact ionization (IA) proposed earlier for bulk systems of strongly correlated insulators is generalized to the case of conventional insulators that contain localized bands a few eV above and below the highest occupied band. Specifically, we study the case of hybridization of localized orbitals with more dispersive bands near the Fermi level, where the generated multiple carriers, which ultimately decay to the edges of the dispersive bands by means of IA processes, acquire lighter mass and this could allow their more efficient separation before recombination. We argue that this may be applicable to the case of halide perovskites and it could be one of the reasons for their observed photovoltaic efficiency. We discuss the criteria one should use to uncover the appropriate material in order to harvest the optimum effect of IA for the spectrum of the solar photon energy distribution.