Jones Leighton O, Mosquera Martín A, Ratner Mark A, Schatz George C
Department of Chemistry , Northwestern University , Evanston , Illinois 60208 , United States.
ACS Appl Mater Interfaces. 2020 Jan 29;12(4):4607-4615. doi: 10.1021/acsami.9b19639. Epub 2020 Jan 15.
The fine-tuning of electro-optic properties is critical for high-performing technologies. This is now obtainable with advanced nanostructures, particularly two-dimensional (2D) monolayer materials such as molybdenum disulfide (MoS). Using spin-polarized periodic density functional theory (DFT), we find that the direct band gap ( → ') can be chemically tuned with covalently bound functional groups. With an electron-withdrawing group such as fluorine, we observe one occupied α and one unoccupied β band, which correspond to the addition of an α electron and a β hole, confirmed with the spin difference ( - ) being 1. By increasing the electron-donating behavior with the replacement of F by H and then by Me, the occupied (valence) α band shifts upward in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both α and β unoccupied (conduction) bands of the MoS shift down, relative to the Fermi energy, until they are in contact with the Fermi and the system can be described as metallic. The MoS + F system is thus a small gap semiconductor (0.96 eV), and the MoS + H and MoS + Me gaps are 0.21 and 0 eV (metallic), respectively. Spin density calculations illustrate the semilocalized nature of the α spin; however, this is not formed from the radical of the functionalizing group, but rather the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. Five- and six-membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene, and pyridine to a sulfur atom of the MoS surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly as p-type conductors. Semilocalization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronic applications, such as photoluminescence devices, contact-free transistors, and quantum communication.
电光性能的微调对于高性能技术至关重要。如今,借助先进的纳米结构,尤其是二维(2D)单层材料,如二硫化钼(MoS),这一目标已可实现。利用自旋极化周期密度泛函理论(DFT),我们发现直接带隙(→')可通过共价结合的官能团进行化学调控。对于带有吸电子基团(如氟)的情况,我们观察到一个占据的α带和一个未占据的β带,这分别对应于添加一个α电子和一个β空穴,自旋差(-)为1证实了这一点。通过用氢然后用甲基取代氟来增强给电子能力,占据的(价)α带相对于费米能在能量上向上移动,未占据的β带向下移动,直至与费米能接触。此外,相对于费米能,MoS的α和β未占据(导)带均向下移动,直至与费米能接触,此时系统可描述为金属性。因此,MoS + F系统是一种小带隙半导体(0.96 eV),而MoS + H和MoS + Me的带隙分别为0.21和0 eV(金属性)。自旋密度计算说明了α自旋的半局域性质;然而,这并非由官能团的自由基形成,而是在自由基夺取后,未成对电子位于硫原子上,从而与该基团形成共价键。对五元环和六元环杂环进行了研究,进一步证实了这些观察结果。与典型的官能团(如苯基)不同,从能带结构中的新α带和β带,我们发现了吡咯、环戊二烯和吡啶与MoS表面硫原子共价键合的证据。功能化MoS的二维单层的电荷载流子性质可通过电荷掺杂(空穴或电子)进一步调控,使得即使是金属系统也能恢复到半导体状态,但重要的是作为p型导体。自旋态的半局域化和带隙的控制可推广到其他共价功能化的二维材料,似乎适用于电子应用,如光致发光器件、无接触晶体管和量子通信。