Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , Republic of Korea.
Department of Physics , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , Republic of Korea.
ACS Sens. 2020 Feb 28;5(2):563-570. doi: 10.1021/acssensors.9b02487. Epub 2020 Jan 21.
High-performance, monolithic photoactivated gas sensors based on the integration of gas-sensitive semiconductor metal oxide nanowires on micro light-emitting diodes (μLEDs) are introduced. The μLEDs showed improved irradiance and energy conversion efficiency (i.e., external quantum efficiency, EQE), as the size of LEDs was reduced from 200 × 200 μm (irradiance of 46.5 W/cm and EQE of 4%) to 30 × 30 μm (irradiance of 822.4 W/cm and EQE of 9%). Gas-sensitive zinc oxide (ZnO) nanowires were directly synthesized on top of the μLED through a hydrothermal reaction. The direct contact between the sensing component and μLED sensor platform leads to high light coupling efficiency, minimizing power consumption of the sensor. Furthermore, the sensing performance (i.e., sensitivity) at optimal operating power was improved as the LED size was reduced. The smallest fabricated gas sensor (active area = 30 × 30 μm) showed excellent NO sensitivity (Δ/ = 605% to 1 ppm NO) at the optimal operating power (∼184 μW). In addition, the sensor showed a low limit of detection (∼14.9 ppb) and robustness to high humidity conditions, which demonstrate its potential for practical applications in mobile internet of things (IoT) devices.
介绍了一种基于将气敏半导体金属氧化物纳米线集成到微发光二极管 (μLED) 上的高性能整体光激活气体传感器。随着 LED 尺寸从 200×200μm(辐照度为 46.5 W/cm,外量子效率为 4%)减小到 30×30μm(辐照度为 822.4 W/cm,外量子效率为 9%),μLED 显示出了改进的辐照度和能量转换效率(即外量子效率,EQE)。通过水热反应,可直接在 μLED 顶部合成气敏氧化锌 (ZnO) 纳米线。传感元件与 μLED 传感器平台的直接接触可实现高光耦合效率,使传感器的功耗最小化。此外,随着 LED 尺寸的减小,最佳工作功率下的传感性能(即灵敏度)得到了提高。制造的最小气体传感器(有效面积 = 30×30μm)在最佳工作功率(约 184μW)下显示出优异的 NO 灵敏度(Δ/=605%至 1ppmNO)。此外,该传感器还表现出低检测限(~14.9ppb)和对高湿度条件的鲁棒性,这证明了其在移动物联网(IoT)设备中的实际应用潜力。