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砷掺杂六方氮化硼单层:一种高灵敏度和短恢复时间的SF分解气体传感器。

As-Doped h-BN Monolayer: A High Sensitivity and Short Recovery Time SF Decomposition Gas Sensor.

作者信息

Long Yunfeng, Xia Sheng-Yuan, Guo Liang-Yan, Tan Yaxiong, Huang Zhengyong

机构信息

State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing 400044, China.

出版信息

Sensors (Basel). 2022 Jun 24;22(13):4797. doi: 10.3390/s22134797.

DOI:10.3390/s22134797
PMID:35808294
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9269263/
Abstract

SF is a common insulating medium of gas-insulated switchgear (GIS). However, it is inevitable that SF will be decomposed due to partial discharge (PD) in GIS, which will cause hidden dangers to the safe and stable operation of equipment. Based on the DFT method, the two-dimensional nano-composite As-doped h-BN (As-BN) monolayer was proposed. By modeling and calculating, the ability of an As-BN monolayer as a specific sensor for SOF (compared with an HO adsorption system and CO adsorption system) was evaluated by parameters such as the binding energy (), adsorption energy (), transfer charge (Δ), geometric structure parameters, the total density of states (TDOS), band structure, charge difference density (CDD), electron localization function (ELF), sensitivity (), and recovery time (). The results showed that an As-BN monolayer showed strong adsorption specificity, high sensitivity, and short recovery time for SOF gas molecules. Therefore, the As-BN monolayer sensor has great application potential in the detection of SF decomposition gases.

摘要

六氟化硫(SF)是气体绝缘开关设备(GIS)中常用的绝缘介质。然而,由于GIS中的局部放电(PD),SF不可避免地会发生分解,这将对设备的安全稳定运行造成隐患。基于密度泛函理论(DFT)方法,提出了二维纳米复合掺砷六方氮化硼(As-BN)单层。通过建模和计算,利用结合能()、吸附能()、转移电荷(Δ)、几何结构参数、态密度总量(TDOS)、能带结构、电荷差密度(CDD)、电子定位函数(ELF)、灵敏度()和恢复时间等参数,评估了As-BN单层作为SOF特定传感器的能力(与HO吸附系统和CO吸附系统相比)。结果表明,As-BN单层对SOF气体分子表现出强吸附特异性、高灵敏度和短恢复时间。因此,As-BN单层传感器在SF分解气体检测中具有很大的应用潜力。

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