Bourlier Yoan, Bérini Bruno, Frégnaux Mathieu, Fouchet Arnaud, Aureau Damien, Dumont Yves
Groupe d'Etude de la Matière Condensée (GEMaC) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France.
Institut Lavoisier de Versailles (ILV) , Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS , 45 Avenue des Etats-Unis , 78035 Versailles , France.
ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8466-8474. doi: 10.1021/acsami.9b21047. Epub 2020 Feb 4.
The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO. The nanothick SrTiO-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.
具有可适应特性的功能性薄膜材料的整合对于信息技术新范式的发展至关重要。其中,具有钙钛矿结构的复合氧化物基于其特别广泛的物理性质多样性而具有巨大潜力。在此,我们展示了通过水溶性钙钛矿牺牲层SrVO₃,在纳米尺度上利用环保工艺将诸如SrTiO₃之类的钙钛矿氧化物材料转移到硅衬底上的可能性。基于原位监测原子力显微镜和光发射研究,我们揭示溶解是从SrVO₃极端表面的富锶相开始的。转移到硅上的纳米厚SrTiO₃层呈现出合适的形态和单晶质量,为在任何基于硅的衬底上整合和开发全钙钛矿氧化物电子器件或“氧电子学”提供了概念验证。