Liu Songlong, Gao Weiqi, Chen Yang, Yang Xiaokun, Niu Kaixin, Li Siyu, Xiao Yulong, Liu Yanfang, Zhong Jiang, Xia Jiangnan, Li Zhou, Hu Yuanyuan, Chen Shulin, Liu Yuan, Wang Yiliu
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering and Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
Nano Lett. 2024 Jun 26;24(25):7724-7731. doi: 10.1021/acs.nanolett.4c01715. Epub 2024 Jun 12.
Perovskite monocrystalline films are regarded as desirable candidates for the integration of high-performance optoelectronics due to their unique photophysical properties. However, the heterogeneous integration of a perovskite monocrystalline film with other semiconductors is fundamentally limited by the lattice mismatch, which hinders direct epitaxy. Herein, the van der Waals (vdW) integration strategy for 3D perovskites is developed, where perovskite monocrystalline films are epitaxially grown on the mother substrate, followed by its peeling off and transferring to arbitrary semiconductors, forming monocrystalline heterojunctions. The as-achieved CsPbBr-Nb-doped SrTiO (Nb:STO) vdW p-n heterojunction exhibited comparable performance to their directly epitaxial counterpart, demonstrating the feasibility of vdW integration for 3D perovskites. Furthermore, the vdW integration could be extended to silicon substrates, rendering the CsPbBr-n-Si and CsPbCl-p-Si p-n heterojunction with apparent rectification behaviors and photoresponse. The vdW integration significantly enriches the selections of semiconductors hybridizing with perovskites and provides opportunities for monocrystalline perovskite optoelectronics with complex configurations and multiple functionalities.
钙钛矿单晶薄膜因其独特的光物理性质而被视为高性能光电器件集成的理想候选材料。然而，钙钛矿单晶薄膜与其他半导体的异质集成从根本上受到晶格失配的限制，这阻碍了直接外延生长。在此，开发了一种用于三维钙钛矿的范德华（vdW）集成策略，即先在母基板上外延生长钙钛矿单晶薄膜，然后将其剥离并转移到任意半导体上，形成单晶异质结。所制备的CsPbBr-Nb掺杂SrTiO（Nb:STO）vdW p-n异质结表现出与其直接外延对应物相当的性能，证明了vdW集成用于三维钙钛矿的可行性。此外，vdW集成可以扩展到硅基板上，制备出具有明显整流行为和光响应的CsPbBr-n-Si和CsPbCl-p-Si p-n异质结。vdW集成显著丰富了与钙钛矿杂交的半导体的选择，并为具有复杂结构和多种功能的单晶钙钛矿光电器件提供了机会。
