Prabaswara Aditya, Kim Hyunho, Min Jung-Wook, Subedi Ram Chandra, Anjum Dalaver H, Davaasuren Bambar, Moore Kalani, Conroy Michele, Mitra Somak, Roqan Iman S, Ng Tien Khee, Alshareef Husam N, Ooi Boon S
Computer, Electrical, and Mathematical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia.
Physical Science and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia.
ACS Nano. 2020 Feb 25;14(2):2202-2211. doi: 10.1021/acsnano.9b09126. Epub 2020 Feb 3.
Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on TiC MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of TiC MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the TiC MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.
在二维材料上生长III族氮化物纳米线具有优势，因为它能有效地将底层生长衬底与纳米线的特性解耦。作为二维材料中一个相对较新的家族，MXenes有望成为III族氮化物纳米线的成核层，能够同时提供透明度和导电性。在这项工作中，我们展示了在TiC MXene薄膜上直接外延生长GaN纳米线。MXene薄膜由喷涂在非晶硅基板上的纳米薄片组成。由于TiC MXene的三角晶格与纤锌矿GaN的六方结构之间的兼容性，我们观察到GaN纳米线与MXene纳米薄片之间存在外延关系。MXene上的GaN纳米线在可见波长下表现出良好的材料质量和部分透明度。使用导电原子力显微镜进行的纳米级电学表征显示，GaN纳米线与TiC MXene薄膜之间的肖特基势垒高度约为330 meV。我们的工作突出了使用MXene作为透明导电预取向成核层在非晶基板上高质量生长GaN的潜力。
