Zhang Yuliang, Xia Ting, Yu Kin Man, Zhang Fuhua, Yang Heng, Liu Boyang, An Yan, Yin Yansheng, Chen Xiaobo
Institute of Marine Materials Science and Engineering, Shanghai Maritime University, Shanghai, 201306 (P. R. China), Fax: (+86) 21-38284801.
Department of Chemistry, University of Missouri-Kansas City, Kansas City, MO 64110 (USA), Fax: (+1) 816-235-2290.
Chempluschem. 2014 Apr;79(4):559-563. doi: 10.1002/cplu.201300415. Epub 2014 Feb 4.
[Cu(SCH )] nanowires with lengths on the order of hundreds of micrometers were obtained with a facile method from the reaction of Cu(NO ) ⋅3 H O, dimethyl sulfoxide (DMSO), and water under hydrothermal conditions within a large range of DMSO/water ratios and at various temperatures. These highly crystalline, thermally stable (under vacuum) nanowires are p-type conducting and have a hole mobility as high as 2 cm V S , which is 10 -10 times higher than previously reported values. The high hole mobility may demonstrate their promising future in various electronic-device applications.
通过一种简便的方法，在水热条件下，于大范围的二甲基亚砜（DMSO）/水比例以及不同温度下，利用硝酸铜（Cu(NO₃)·3H₂O）、二甲基亚砜（DMSO）和水的反应，制备出了长度在数百微米量级的[Cu(SCH)]纳米线。这些高度结晶、热稳定（在真空下）的纳米线是p型导电的，其空穴迁移率高达2 cm² V⁻¹ s⁻¹，比先前报道的值高10 - 100倍。高空穴迁移率可能表明它们在各种电子器件应用中有着广阔的前景。
