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R-X⋯NH 卤键复合物的理论描述:R 基团对复合物稳定性和 σ -hole 电子耗尽的影响。

Theoretical Description of R-X⋯NH Halogen Bond Complexes: Effect of the R Group on the Complex Stability and Sigma-Hole Electron Depletion.

机构信息

Instituto de Simulación Computacional (ISC-USFQ), Universidad San Francisco de Quito, Diego de Robles y Vía Interoceánica, Quito 17-1200-841, Ecuador.

Departamento de Ingeniería Química, Grupo de Química Computacional y Teórica (QCT-USFQ), Universidad San Francisco de Quito, Diego de Robles y Vía Interoceánica, Quito 17-1200-841, Ecuador.

出版信息

Molecules. 2020 Jan 25;25(3):530. doi: 10.3390/molecules25030530.

Abstract

In the present work, a number of R-X⋯NH (X = Cl, Br, and I) halogen bonded systems were theoretical studied by means of DFT calculations performed at the ωB97XD/6-31+G(d,p) level of theory in order to get insights on the effect of the electron-donating or electron-withdrawing character of the different R substituent groups (R = halogen, methyl, partially fluorinated methyl, perfluoro-methyl, ethyl, vinyl, and acetyl) on the stability of the halogen bond. The results indicate that the relative stability of the halogen bond follows the Cl < Br < I trend considering the same R substituent whereas the more electron-withdrawing character of the R substituent the more stable the halogen bond. Refinement of the latter results, performed at the MP2/6-31+G(d,p) level showed that the DFT and the MP2 binding energies correlate remarkably well, suggesting that the Grimme's type dispersion-corrected functional produces reasonable structural and energetic features of halogen bond systems. DFT results were also observed to agree with more refined calculations performed at the CCSD(T) level. In a further stage, a more thorough analysis of the R-Br⋯NH complexes was performed by means of a novel electron localization/delocalization tool, defined in terms of an Information Theory, IT, based quantity obtained from the conditional pair density. For the latter, our in-house developed C++/CUDA program, called KLD (acronym of Kullback-Leibler divergence), was employed. KLD results mapped onto the one-electron density plotted at a 0.04 a.u. isovalue, showed that (i) as expected, the localized electron depletion of the Br sigma-hole is largely affected by the electron-withdrawing character of the R substituent group and (ii) the R-X bond is significantly polarized due to the presence of the NH molecule in the complexes. The afore-mentioned constitutes a clear indication of the dominant character of electrostatics on the stabilization of halogen bonds in agreement with a number of studies reported in the main literature. Finally, the cooperative effects on the [Br-CN] system ( = 1-8) was evaluated at the MP2/6-31+G(d,p) level, where it was observed that an increase of about ~14.2% on the complex stability is obtained when going from = 2 to = 8. The latter results were corroborated by the analysis of the changes on the Fermi-hole localization pattern on the halogen bond zones, which suggests an also important contribution of the electron correlation in the stabilization of these systems.

摘要

在本工作中,通过在 ωB97XD/6-31+G(d,p)理论水平上进行的 DFT 计算,对一系列 R-X⋯NH(X = Cl、Br 和 I)卤键体系进行了理论研究,以便深入了解不同 R 取代基(R = 卤素、甲基、部分氟化甲基、全氟甲基、乙基、乙烯基和乙酰基)的供电子或吸电子特性对卤键稳定性的影响。结果表明,考虑到相同的 R 取代基,卤键的相对稳定性遵循 Cl < Br < I 的趋势,而 R 取代基的吸电子特性越强,卤键越稳定。在 MP2/6-31+G(d,p)水平上对后者结果进行的细化表明,DFT 和 MP2 结合能非常好地相关,表明 Grimme 型色散校正函数产生了卤键体系合理的结构和能量特征。DFT 结果也与在 CCSD(T)水平上进行的更精细计算一致。在进一步阶段,通过一种新的基于信息论(IT)的电子定域/离域工具对 R-Br⋯NH 配合物进行了更深入的分析,该工具是根据从条件对密度获得的基于 IT 的定量来定义的。对于后者,我们使用了内部开发的 C++/CUDA 程序,称为 KLD(Kullback-Leibler 发散的缩写)。将 KLD 结果映射到在 0.04 a.u.等密度面上绘制的单电子密度上,结果表明:(i)正如预期的那样,R 取代基组的吸电子特性对 Br sigma-空穴的电子耗尽有很大影响,(ii)由于配合物中存在 NH 分子,R-X 键明显极化。上述结果清楚地表明,静电对卤键稳定的主导作用与主要文献中报道的许多研究一致。最后,在 MP2/6-31+G(d,p)水平上评估了 [Br-CN] 体系( = 1-8)的协同效应,结果表明,当从 = 2 增加到 = 8 时,配合物稳定性增加约 14.2%。后者结果得到了卤键区域的 Fermi-hole 定域模式变化分析的证实,这表明电子相关对这些体系稳定化的重要贡献。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/151a/7037998/6fb1fde678d5/molecules-25-00530-sch001.jpg

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