Li Wei, Zeng Yanli, Li Xiaoyan, Sun Zheng, Meng Lingpeng
Institute of Computational Quantum Chemistry, College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang, 050024, People's Republic of China.
J Comput Chem. 2015 Jul 5;36(18):1349-58. doi: 10.1002/jcc.23922. Epub 2015 Apr 27.
The positive electrostatic potentials (ESP) outside the σ-hole along the extension of OP bond in OPH3 and the negative ESP outside the nitrogen atom along the extension of the CN bond in NCX could form the Group V σ-hole interaction OPH3 ⋯NCX. In this work, the complexes NCY⋯OPH3 ⋯NCX and OPH3 ⋯NCX⋯NCY (X, YF, Cl, Br) were designed to investigate the enhancing effects of Y⋯O and X⋯N halogen bonds on the P⋯N Group V σ-hole interaction. With the addition of Y⋯O halogen bond, the VS, max values outside the σ-hole region of OPH3 becomes increasingly positive resulting in a stronger and more polarizable P⋯N interaction. With the addition of X⋯N halogen bond, the VS, min values outside the nitrogen atom of NCX becomes increasingly negative, also resulting in a stronger and more polarizable P⋯N interaction. The Y⋯O halogen bonds affect the σ-hole region (decreased density region) outside the phosphorus atom more than the P⋯N internuclear region (increased density region outside the nitrogen atom), while it is contrary for the X⋯N halogen bonds.
在OPH3中,沿着OP键的延伸方向,σ-空穴外侧存在正静电势(ESP);在NCX中,沿着CN键的延伸方向,氮原子外侧存在负ESP,二者可形成第Ⅴ族σ-空穴相互作用OPH3⋯NCX。在本工作中,设计了配合物NCY⋯OPH3⋯NCX和OPH3⋯NCX⋯NCY(X、YF、Cl、Br),以研究Y⋯O和X⋯N卤键对P⋯N第Ⅴ族σ-空穴相互作用的增强作用。随着Y⋯O卤键的加入,OPH3的σ-空穴区域外侧的VS, max值变得越来越正,导致P⋯N相互作用更强且更具极化性。随着X⋯N卤键的加入,NCX氮原子外侧的VS, min值变得越来越负,同样导致P⋯N相互作用更强且更具极化性。Y⋯O卤键对磷原子外侧的σ-空穴区域(密度降低区域)的影响大于对P⋯N核间区域(氮原子外侧密度增加区域)的影响,而X⋯N卤键的情况则相反。