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Y⋯O和X⋯N卤键在NCY⋯O=PH3 ⋯NCX和O=PH3 ⋯NCX⋯NCY(X、Y = F、Cl和Br)配合物中对增强第V族σ-空穴相互作用的竞争。

The competition of Y⋯O and X⋯N halogen bonds to enhance the group V σ-hole interaction in the NCY⋯O=PH3 ⋯NCX and O=PH3 ⋯NCX⋯NCY (X, Y=F, Cl, and Br) complexes.

作者信息

Li Wei, Zeng Yanli, Li Xiaoyan, Sun Zheng, Meng Lingpeng

机构信息

Institute of Computational Quantum Chemistry, College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang, 050024, People's Republic of China.

出版信息

J Comput Chem. 2015 Jul 5;36(18):1349-58. doi: 10.1002/jcc.23922. Epub 2015 Apr 27.

DOI:10.1002/jcc.23922
PMID:25916886
Abstract

The positive electrostatic potentials (ESP) outside the σ-hole along the extension of OP bond in OPH3 and the negative ESP outside the nitrogen atom along the extension of the CN bond in NCX could form the Group V σ-hole interaction OPH3 ⋯NCX. In this work, the complexes NCY⋯OPH3 ⋯NCX and OPH3 ⋯NCX⋯NCY (X, YF, Cl, Br) were designed to investigate the enhancing effects of Y⋯O and X⋯N halogen bonds on the P⋯N Group V σ-hole interaction. With the addition of Y⋯O halogen bond, the VS, max values outside the σ-hole region of OPH3 becomes increasingly positive resulting in a stronger and more polarizable P⋯N interaction. With the addition of X⋯N halogen bond, the VS, min values outside the nitrogen atom of NCX becomes increasingly negative, also resulting in a stronger and more polarizable P⋯N interaction. The Y⋯O halogen bonds affect the σ-hole region (decreased density region) outside the phosphorus atom more than the P⋯N internuclear region (increased density region outside the nitrogen atom), while it is contrary for the X⋯N halogen bonds.

摘要

在OPH3中,沿着OP键的延伸方向,σ-空穴外侧存在正静电势(ESP);在NCX中,沿着CN键的延伸方向,氮原子外侧存在负ESP,二者可形成第Ⅴ族σ-空穴相互作用OPH3⋯NCX。在本工作中,设计了配合物NCY⋯OPH3⋯NCX和OPH3⋯NCX⋯NCY(X、YF、Cl、Br),以研究Y⋯O和X⋯N卤键对P⋯N第Ⅴ族σ-空穴相互作用的增强作用。随着Y⋯O卤键的加入,OPH3的σ-空穴区域外侧的VS, max值变得越来越正,导致P⋯N相互作用更强且更具极化性。随着X⋯N卤键的加入,NCX氮原子外侧的VS, min值变得越来越负,同样导致P⋯N相互作用更强且更具极化性。Y⋯O卤键对磷原子外侧的σ-空穴区域(密度降低区域)的影响大于对P⋯N核间区域(氮原子外侧密度增加区域)的影响,而X⋯N卤键的情况则相反。

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