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具有低功函数和高载流子迁移率的二维半导体LuCT(T = F,OH)MXene。

Two-dimensional semiconducting LuCT (T = F, OH) MXene with low work function and high carrier mobility.

作者信息

Bai Xiaojing, Zha Xian-Hu, Qiao Yingjie, Qiu Nianxiang, Zhang Yiming, Luo Kan, He Jian, Li Qiuwu, Huang Qing, Francisco Joseph S, Lin Cheng-Te, Du Shiyu

机构信息

College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, Heilongjiang 150001, China.

Center for Quantum Computing, Peng Cheng Laboratory, Shenzhen 518055, China.

出版信息

Nanoscale. 2020 Feb 14;12(6):3795-3802. doi: 10.1039/c9nr10806h. Epub 2020 Jan 29.

DOI:10.1039/c9nr10806h
PMID:31994570
Abstract

As a new family of two-dimensional materials, MXenes have attracted increasing attention in recent years due to their widespread potential applications. In contrast to early transition metals in convention, here we expand the M element of MXene to the rare earth element lutetium. Based on the first-principles density functional calculations, the bare lutetium-based carbide MXene LuC is determined to be stabilized in the T-type configuration. Furthermore, both fluorine and hydroxyl terminated configurations are found to be semiconductors, and their band gaps are suitable for use in semiconductors and visible and near-infrared optical devices. The LuC(OH) configuration shows a direct band gap and possesses an ultralow work function of 1.4 eV. Both LuCT (T = F, OH) MXenes exhibit high carrier mobilities. Particularly, the electron mobility of the LuC(OH) MXene is found to be anisotropic at room temperature, with values as high as 95.19 × 10 and 217.1 × 10 cm V·s in the zigzag and armchair directions, respectively, which makes LuC(OH) a promising material for nanodevices. Based on these predicted properties, our work widens the range of MXene materials and their applications in semiconducting devices.

摘要

作为二维材料的一个新家族,MXenes近年来因其广泛的潜在应用而受到越来越多的关注。与传统的早期过渡金属不同,在这里我们将MXene的M元素扩展到稀土元素镥。基于第一性原理密度泛函计算,确定裸露的镥基碳化物MXene LuC以T型构型稳定。此外,发现氟和羟基封端的构型均为半导体,其带隙适用于半导体以及可见光和近红外光电器件。LuC(OH)构型显示出直接带隙,并具有1.4 eV的超低功函数。两种LuCT(T = F,OH)MXenes都表现出高载流子迁移率。特别地,发现LuC(OH) MXene在室温下的电子迁移率是各向异性的,在锯齿形和扶手椅形方向上的值分别高达95.19×10和217.1×10 cm² V⁻¹·s⁻¹,这使得LuC(OH)成为纳米器件的一种有前途的材料。基于这些预测特性,我们的工作拓宽了MXene材料的范围及其在半导体器件中的应用。

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