Bakly Ali A K, Spencer Ben F, O'Brien Paul
1School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
2School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL UK.
J Mater Sci. 2018;53(6):4360-4370. doi: 10.1007/s10853-017-1872-1. Epub 2017 Dec 7.
Thin films of Cd Zn S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(CHOCS)] and zinc ethylxanthato [Zn(CHOCS)] in ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250 °C for 1 h under N. The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 ≤ ≤ 0.15 and at = 1). The resistivity of Cd Zn S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd Zn S thin films by a spin coating/melt method from xanthato precursors.
通过一种新颖的旋涂/熔融法,由乙基黄原酸镉[Cd(CHOCS)]和乙基黄原酸锌[Zn(CHOCS)]以0 - 0.15和1的比例制备了Cd Zn S(CZS)薄膜。将前驱体在四氢呋喃中的溶液旋涂到玻璃基板上,然后在氮气气氛下于250℃加热1小时。通过改变溶液组成和/或涂层的旋涂速率,可以控制形成的薄膜厚度。在所有情况下均使用50 mM的总金属前驱体溶液浓度。通过p-XRD、SEM、EDX、ICP-AES、XPS、紫外可见吸收光谱、拉曼光谱和电阻率测量对薄膜进行了表征。薄膜的带隙在2.35 - 2.58和3.75 eV之间(0≤≤0.15且= 1时)。发现Cd Zn S薄膜的电阻率随锌含量呈线性变化,并且薄膜的性能表明其作为窗口层在光伏领域具有潜在应用。这项工作是首次通过旋涂/熔融法从黄原酸前驱体制备Cd Zn S薄膜的研究。