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采用过滤阴极真空电弧制备的四面体非晶碳用于钙钛矿太阳能电池和量子点发光二极管的空穴传输层。

Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs.

作者信息

Seok Hae-Jun, Kang Yong-Jin, Kim Jongkuk, Kim Do-Hyeong, Heo Su Been, Kang Seong Jun, Kim Han-Ki

机构信息

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, Republic of Korea.

Surface Engineering Department, Implementation Research Division, Korea Institute of Materials Science (KIMS), Changwon-Si, Republic of Korea.

出版信息

Sci Technol Adv Mater. 2019 Nov 22;20(1):1118-1130. doi: 10.1080/14686996.2019.1694841. eCollection 2019.

DOI:10.1080/14686996.2019.1694841
PMID:32002086
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6968577/
Abstract

(ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dot light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing, reasonable electrical conductivity, optical transmittance, and a high work function. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp/sp hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance of 10.33 Ω, a resistivity of 1.34 × 10 Ω cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, the performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than the performance of QDLEDs with different ta-C thicknesses. It is concluded that ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.

摘要

通过过滤阴极真空电弧(FCVA)工艺制备的(ta-C)薄膜,用作钙钛矿太阳能电池(PSC)和量子点发光二极管(QDLED)的空穴传输层(HTL)。p型ta-C薄膜具有几个显著特性,包括易于制备且无需热退火、合理的电导率、光学透过率和高功函数。X射线光电子能谱和紫外光电子能谱检测表明,ta-C HTL的电学性质(sp/sp杂化键)和功函数适用于PSC和QDLED。此外,为了关联器件的性能,详细研究了沉积在ITO阳极上不同厚度(5~20nm)的FCVA生长的ta-C薄膜的光学、表面形态和结构性质。沉积在ITO阳极上的厚度为5nm的优化ta-C薄膜的方块电阻为10.33Ω,电阻率为1.34×10Ω·cm,光学透过率为88.97%。与具有p-NiO HTL的参考PSC相比,具有5nm厚ta-C HTL的PSC由于其填充因子的提高而产生了更高的功率转换效率(PCE,10.53%)。此外,具有5nm厚ta-C空穴注入层(HIL)的QDLED的性能优于具有不同ta-C厚度的QDLED。得出结论,ta-C薄膜有潜力在下一代PSC和QDLED中用作HTL和HIL。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/3faa2207b393/TSTA_A_1694841_F0010_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/b664d24ab038/TSTA_A_1694841_UF0001_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/59187407883a/TSTA_A_1694841_F0001_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/40d658dac542/TSTA_A_1694841_F0002_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/f5db46da87db/TSTA_A_1694841_F0003_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/784608c4b52c/TSTA_A_1694841_F0004_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/d77302b7fe1b/TSTA_A_1694841_F0005_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/5c730500d9c5/TSTA_A_1694841_F0006_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/d6398b9c38ef/TSTA_A_1694841_F0007_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/8d58887cc46c/TSTA_A_1694841_F0008_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/a37a839413e5/TSTA_A_1694841_F0009_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/3faa2207b393/TSTA_A_1694841_F0010_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/b664d24ab038/TSTA_A_1694841_UF0001_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/59187407883a/TSTA_A_1694841_F0001_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/40d658dac542/TSTA_A_1694841_F0002_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/f5db46da87db/TSTA_A_1694841_F0003_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/784608c4b52c/TSTA_A_1694841_F0004_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/d77302b7fe1b/TSTA_A_1694841_F0005_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/5c730500d9c5/TSTA_A_1694841_F0006_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/d6398b9c38ef/TSTA_A_1694841_F0007_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/8d58887cc46c/TSTA_A_1694841_F0008_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/a37a839413e5/TSTA_A_1694841_F0009_OC.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e42/6968577/3faa2207b393/TSTA_A_1694841_F0010_OC.jpg

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