Yang Guanhua, Shao Yan, Niu Jiebin, Ma Xiaolei, Lu Congyan, Wei Wei, Chuai Xichen, Wang Jiawei, Cao Jingchen, Huang Hao, Xu Guangwei, Shi Xuewen, Ji Zhuoyu, Lu Nianduan, Geng Di, Qi Jing, Cao Yun, Liu Zhongliu, Liu Liwei, Huang Yuan, Liao Lei, Dang Weiqi, Zhang Zhengwei, Liu Yuan, Duan Xidong, Chen Jiezhi, Fan Zhiqiang, Jiang Xiangwei, Wang Yeliang, Li Ling, Gao Hong-Jun, Duan Xiangfeng, Liu Ming
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
Nat Commun. 2020 Jan 31;11(1):659. doi: 10.1038/s41467-020-14383-0.
In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS/WSe field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
在原子级薄的二维（2D）半导体中，由于其边缘态导致的电流流动不均匀性可能会改变甚至决定整个器件的电荷传输特性。然而，迄今为止，边缘态对二维材料中电输运的影响尚未得到充分研究。在此，我们系统地量化了单层MoS/WSe场效应晶体管中边缘态对电输运的贡献，揭示了低温下的电荷传输由具有非线性行为的边缘传导主导。通过扫描探针显微镜、扫描开尔文探针力显微镜和第一性原理计算揭示了金属边缘态。进一步分析表明，边缘态主导的非线性输运与温度和偏置电压均呈现出普遍的幂律标度关系，这可以用一维卢廷格液体理论很好地解释。这些发现证明了二维材料中的卢廷格液体行为，并为二维电子器件的设计提供了重要见解。
