Wu Qiong, Li Mingqun, Hu Qinnan, Zhang Zewu, Zhu Weihua
School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing Institute of Technology, 1 Hongjing Road, Nanjing, 211167, China.
Institute for Computation in Molecular and Materials Science and Department of Chemistry, Nanjing University of Science and Technology, Nanjing, 210094, China.
J Mol Model. 2020 Feb 3;26(3):41. doi: 10.1007/s00894-020-4310-2.
Boron-contained compounds are one kind of new energetic materials, and have been synthesized successfully lately. However, the effects of introduced boron atoms into the energetic system are unclear. In this work, using the known insensitive energy crystal 2,6-diamino-3,5-dinitropyrazine-l-oxide (LLM-105) as the model compound, boron doping effects on its crystal structure, band gap and structure, intermolecular contacts, sensitivity, elastic property, optical absorption behavior, and dielectric function were studied by the first principles calculations and Hirshfeld surface analysis. One B atom was doped at four different doping sites in the ring (two kinds of nitrogen N1/N2 and carbon atoms C3/C4), respectively, and formed four new crystals LLM-105-B1/B2/B3/B4. The results showed that the B atom and its doping site both make great influence on the structure and properties. The B doping obviously decreased the band gap and weakened the strength of intermolecular contacts, giving rise to higher sensitivity and worse safety. Especially for LLM-105-B4 which has a 0 eV value of band gap, the doped B atom made great contributions to the density of states around the Fermi level, leading to the suddenly move down of lowest unoccupied molecular orbital and directly link of total density of states at the Fermi level. Doping the B atom at the site C3 improved the ductility and plasticity of LLM-105, while LLM-105-B2 was found to be the most brittle and anisotropic crystal. Doping B atoms at sites N2 and C4 increased the absorption to green, orange, and red lights, while the absorption strength to the infrared light was enhanced in most cases. The dielectric constant and polarity were significantly increased by doping boron atoms at sites C3 and C4.
含硼化合物是一类新型含能材料,近年来已成功合成。然而,将硼原子引入含能体系的影响尚不清楚。在本工作中,以已知的钝感含能晶体2,6-二氨基-3,5-二硝基吡嗪-1-氧化物(LLM-105)为模型化合物,通过第一性原理计算和 Hirshfeld 表面分析研究了硼掺杂对其晶体结构、带隙与结构、分子间相互作用、感度、弹性性质、光吸收行为和介电函数的影响。分别在环上四个不同的掺杂位点(两种氮原子N1/N2和碳原子C3/C4)掺杂一个B原子,形成了四种新晶体LLM-105-B1/B2/B3/B4。结果表明,B原子及其掺杂位点对结构和性能都有很大影响。硼掺杂明显降低了带隙,削弱了分子间相互作用强度,导致感度提高和安全性变差。特别是对于带隙值为0 eV的LLM-105-B4,掺杂的B原子对费米能级附近的态密度有很大贡献,导致最低未占分子轨道突然下移,费米能级处的总态密度直接相连。在C3位点掺杂B原子提高了LLM-105的延展性和可塑性,而LLM-105-B2是最脆且各向异性的晶体。在N2和C4位点掺杂B原子增加了对绿色、橙色和红色光的吸收,并且在大多数情况下增强了对红外光的吸收强度。在C3和C4位点掺杂硼原子显著提高了介电常数和极性。