Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, 70569, Germany.
School of Medicine and School of Engineering, Koç University, 34450, Istanbul, Turkey.
Adv Mater. 2020 Mar;32(10):e1907453. doi: 10.1002/adma.201907453. Epub 2020 Feb 3.
Although substrates play an important role upon crystallization of supercooled liquids, the influences of surface temperature and thermal property have remained elusive. Here, the crystallization of supercooled phase-change gallium (Ga) on substrates with different thermal conductivity is studied. The effect of interfacial temperature on the crystallization kinetics, which dictates thermo-mechanical stresses between the substrate and the crystallized Ga, is investigated. At an elevated surface temperature, close to the melting point of Ga, an extended single-crystal growth of Ga on dielectric substrates due to layering effect and annealing is realized without the application of external fields. Adhesive strength at the interfaces depends on the thermal conductivity and initial surface temperature of the substrates. This insight can be applicable to other liquid metals for industrial applications, and sheds more light on phase-change memory crystallization.
虽然底物在过冷液体的结晶中起着重要作用，但表面温度和热性质的影响仍不清楚。在这里，研究了具有不同导热系数的基底上过冷相变换热镓（Ga）的结晶。研究了界面温度对结晶动力学的影响，这决定了基底与结晶 Ga 之间的热机械应力。在升高的表面温度下，接近 Ga 的熔点，由于分层效应和退火，Ga 在介电基底上实现了扩展的单晶生长，而无需施加外部场。界面处的粘附强度取决于基底的导热系数和初始表面温度。这一见解可适用于其他液态金属的工业应用，并为相变存储结晶提供了更多的启示。
