Fang Feier, Li Henan, Yao Huizhen, Jiang Ke, Liu Zexiang, Lin Congjian, Chen Fuming, Wang Ye, Liu Lai
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China.
Nanomaterials (Basel). 2019 Aug 3;9(8):1122. doi: 10.3390/nano9081122.
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS films was investigated in detail. By optimizing the preparation conditions, the SnS array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS was 1.53, about 1.4 times higher than that of the pristine SnS array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS heterojunction photodetectors have great potential in photodetection devices.
二维（2D）金属二硫属化物因其独特的层状结构和强烈的光与物质相互作用，在光电器件中的应用受到了广泛关注。本文通过简便的化学浴沉积（CBD）法合成了垂直生长的SnS纳米片阵列薄膜。详细研究了沉积时间和退火温度对SnS薄膜质量的影响。通过优化制备条件，SnS阵列薄膜在阳光下表现出高效的光电探测性能。此外，为了提高基于SnS纳米片薄膜的光电探测器的性能，通过湿化学方法直接转移技术引入了透明石墨烯薄膜作为空穴传输层。石墨烯/SnS纳米片阵列薄膜异质结光电探测器表现出增强的光响应性。基于石墨烯/SnS的光电探测器的光开/关比为１.５３，约为原始SnS阵列薄膜的１.４倍。光响应性能的改善表明垂直SnS纳米片阵列薄膜与石墨烯之间的有效异质结抑制了光生载流子的复合。结果表明，石墨烯/SnS异质结光电探测器在光电探测器件中具有巨大潜力。
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