Kaden William E, Pomp Sascha, Sterrer Martin, Freund Hans-Joachim
1Department of Chemical Physics, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany.
3Present Address: Department of Physics, University of Central Florida, 4111 Libra Drive, Physical Sciences Building 308, Orlando, FL 32816 USA.
Top Catal. 2017;60(6):471-480. doi: 10.1007/s11244-016-0715-7. Epub 2016 Nov 1.
Hydroxylation and dissolution of well-structured silica bilayer films grown on a ruthenium single-crystal support (SiO/Ru(0001)) was studied by temperature programmed desorption and X-ray photoelectron spectroscopy (XPS). Water desorption signals from SiO/Ru(0001) hydroxylated by electron-bombardment of adsorbed ice at 100 K were found to be comparable to those of hydroxylated bulk silica samples and attributed to adsorbed molecular water and silanol groups (vicinal and terminal). Isotopic exchange between O-labeled SiO and O-labeled water suggests the occurrence of dynamic siloxane bond cleavage and re-formation during electron bombardment. Together with the observed strong dependence of hydroxylation activity on ice coverage, which is found to increase with increasing thickness of the ice layer, a hydroxylation mechanism based on the activation of siloxane bonds by water radiolysis products (e.g. hydroxyls) and subsequent water dissociation is proposed. Dissolution rates obtained from the attenuation of Si 2 and O 1 XPS signal intensities upon exposure of bilayer SiO/Ru(0001) to alkaline conditions at various temperatures are in agreement with the proposed rate model for bulk silica dissolution by OH attack and provide further corroboration of the proposed hydroxylation mechanism.
通过程序升温脱附和X射线光电子能谱(XPS)研究了在钌单晶载体(SiO/Ru(0001))上生长的结构良好的二氧化硅双层膜的羟基化和溶解过程。发现通过在100 K下对吸附的冰进行电子轰击而羟基化的SiO/Ru(0001)的水脱附信号与羟基化的块状二氧化硅样品的信号相当,且归因于吸附的分子水和硅醇基团(邻位和末端)。O标记的SiO与O标记的水之间的同位素交换表明在电子轰击过程中发生了动态硅氧烷键的断裂和重新形成。连同观察到的羟基化活性对冰覆盖率的强烈依赖性(发现其随冰层厚度增加而增加),提出了一种基于水辐射分解产物(例如羟基)对硅氧烷键的活化以及随后的水离解的羟基化机制。在不同温度下将双层SiO/Ru(0001)暴露于碱性条件下时,从Si 2和O 1 XPS信号强度的衰减获得的溶解速率与通过OH攻击块状二氧化硅溶解的提议速率模型一致,并为提议的羟基化机制提供了进一步的证实。