Yoo Gang Yeol, Nurrosyid Naufan, Lee SeungJe, Jeong Youngsoon, Yoon Ilsun, Kim Changwook, Kim Woong, Jang Sung-Yeon, Do Young Rag
Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan 44919, Republic of Korea.
ACS Appl Mater Interfaces. 2020 Mar 4;12(9):10626-10636. doi: 10.1021/acsami.9b19871. Epub 2020 Feb 19.
A newly developed nanopatterned broadband antireflective (AR) coating was fabricated on the front side of a glass/indium tin oxide/perovskite solar cell (PSC) by depositing a single interference layer onto a two-dimensional (2D)-patterned moth-eye-like nanostructure. The optimized developed AR nanostructure was simulated in a finite-difference time domain analysis. To realize the simulated developed AR nanostructure, we controlled the SiO moth-eye structure with various diameters and heights and a MgF single layer with varying thicknesses by sequentially performing nanosphere lithography, reactive ion etching, and electron-beam evaporation. Optimization of the developed AR nanostructure, which has a 100 nm-thick MgF film coated onto the SiO moth-eye-like nanostructure (diameter 165 nm and height 400 nm), minimizes the reflection loss throughout the visible range. As a result, the short-circuit current density () of the newly AR-coated PSC increases by 11.80%, while the open-circuit voltage () remains nearly constant. Therefore, the power conversion efficiency of the newly developed AR-decorated PSC increases by 12.50%, from 18.21% for a control sample to 20.48% for the optimum AR-coated sample. These results indicate that the newly developed MgF/SiO AR nanostructure can provide an advanced platform technology that reduces the Fresnel loss and therefore increases the possibility of the commercialization of glass-based PSCs.
通过在二维（2D）图案化的蛾眼状纳米结构上沉积单个干涉层，在玻璃/氧化铟锡/钙钛矿太阳能电池（PSC）的正面制备了一种新开发的纳米图案化宽带抗反射（AR）涂层。在时域有限差分分析中对优化后的AR纳米结构进行了模拟。为了实现模拟的AR纳米结构，我们通过依次进行纳米球光刻、反应离子刻蚀和电子束蒸发，控制了具有不同直径和高度的SiO蛾眼结构以及具有不同厚度的MgF单层。优化后的AR纳米结构是在SiO蛾眼状纳米结构（直径165nm，高度400nm）上涂覆一层100nm厚的MgF薄膜，可将整个可见光范围内的反射损失降至最低。结果，新涂覆AR的PSC的短路电流密度（）增加了11.80%，而开路电压（）几乎保持不变。因此，新开发的涂覆AR的PSC的功率转换效率提高了12.50%，从对照样品的18.21%提高到最佳涂覆AR样品的20.48%。这些结果表明，新开发的MgF/SiO AR纳米结构可以提供一种先进的平台技术，减少菲涅耳损失，从而增加基于玻璃的PSC商业化的可能性。
