Zhang Chengpeng, Yi Peiyun, Peng Linfa, Ni Jun
Appl Opt. 2017 Apr 1;56(10):2901-2907. doi: 10.1364/AO.56.002901.
Reflection loss can cause harmful effects on the performance of optoelectronic devices, such as cell phones, notebooks, displays, solar cells, and light-emitting diode (LED) devices. In order to obtain broadband antireflection (AR) properties, many researchers have utilized surface texture techniques to produce AR subwavelength structures on the interfaces. Among the AR subwavelength structures, the moth-eye nanostructure is one of the most promising structures, with the potential for commercialization in the near future. In this research, to obtain broadband AR performance, the optimization of moth-eye nanostructures was first carried out using the finite difference time domain method within the spectral ranges of 400-800 nm, including the optimization of shape, height, pitch, and residual layer thickness. In addition, the continuous production of moth-eye nanostructure array upon a flexible polyethylene terephthalate substrate was demonstrated by using the roll-to-roll ultraviolet nanoimprint lithography (R2R UV-NIL) process and anodic aluminum oxide mold, which provided a solution for the cost-effective fabrication of moth-eye nanostructure array. The AR performance of moth-eye nanostructure array obtained by the R2R UV-NIL process was also investigated experimentally, and good consistence was shown with the simulated results. This research can provide a beneficial direction for the optimization and cost-effective production of the moth-eye nanostructure array.
反射损耗会对诸如手机、笔记本电脑、显示器、太阳能电池和发光二极管(LED)设备等光电器件的性能产生有害影响。为了获得宽带抗反射(AR)特性,许多研究人员利用表面纹理技术在界面上制备AR亚波长结构。在AR亚波长结构中,蛾眼纳米结构是最有前途的结构之一,有望在不久的将来实现商业化。在本研究中,为了获得宽带AR性能,首先在400-800nm光谱范围内使用时域有限差分法对蛾眼纳米结构进行优化,包括形状、高度、间距和残留层厚度的优化。此外,通过卷对卷紫外纳米压印光刻(R2R UV-NIL)工艺和阳极氧化铝模具,展示了在柔性聚对苯二甲酸乙二醇酯基板上连续制备蛾眼纳米结构阵列,这为蛾眼纳米结构阵列的低成本制造提供了解决方案。还通过实验研究了通过R2R UV-NIL工艺获得的蛾眼纳米结构阵列的AR性能,结果与模拟结果显示出良好的一致性。本研究可为蛾眼纳米结构阵列的优化和低成本生产提供有益的指导方向。