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由金属有机框架衍生的硫化镍封装在三维导电网络中用于高性能超级电容器。

MOF-derived NiS Encapsulated in 3D Conductive Network for High-Performance Supercapacitor.

作者信息

Yang Yan, Li Mei-Ling, Lin Jia-Na, Zou Min-Yi, Gu Song-Ting, Hong Xu-Jia, Si Li-Ping, Cai Yue-Peng

机构信息

School of Chemistry , South China Normal University , Guangzhou 510006 , P. R. China.

School of Materials Science and Energy Engineering , Foshan University , Foshan 528000 , P. R. China.

出版信息

Inorg Chem. 2020 Feb 17;59(4):2406-2412. doi: 10.1021/acs.inorgchem.9b03263. Epub 2020 Feb 7.

DOI:10.1021/acs.inorgchem.9b03263
PMID:32030979
Abstract

Transition-metal sulfide is a good kind of material for supercapacitors because of the large capacity. Nevertheless, the low electroconductivity, slow reaction kinetics, and limited active centers lead to poor electrochemical properties such as long-term cycling stability. In the present work, nano nickel metal-organic framework (Ni-MOF) was constructed by using the nitrogen-rich functional group ligand 2,4,6-tris(3,5-dicarboxylphenylamino)-1,3,5-triazin and compounded with carbon nanotubes (CNTs) to prepare Ni-MOF/CNTs composite, which was used as a precursor to prepare the MOFs-derived NC/Ni-NiS/CNTs composite with the NiS uniformly distributed in the three-dimensional (3D) conductive network. The rich nitrogen doping and 3D conductive network constructed by CNTs improved the conductivity, prompted the rapid entry of electrolyte, and improved the reaction kinetics of NC/Ni-NiS/CNTs, thus obtained excellent specific capacitance, coulomb efficiency, and cyclic stability. The specific capacitance of NC/Ni-NiS/CNTs is 1489.9 F/g at 1 A/g, which remains 800 F/g at 10 A/g, showing good rate performance.

摘要

过渡金属硫化物因其大容量而成为超级电容器的一种优质材料。然而,其低电导率、缓慢的反应动力学以及有限的活性中心导致诸如长期循环稳定性等电化学性能较差。在本工作中,使用富含氮的官能团配体2,4,6-三(3,5-二羧基苯基氨基)-1,3,5-三嗪构建了纳米镍金属有机框架(Ni-MOF),并与碳纳米管(CNTs)复合制备了Ni-MOF/CNTs复合材料,该复合材料用作前驱体制备了MOFs衍生的NC/Ni-NiS/CNTs复合材料,其中NiS均匀分布在三维(3D)导电网络中。由CNTs构建的丰富氮掺杂和3D导电网络提高了电导率,促使电解质快速进入,并改善了NC/Ni-NiS/CNTs的反应动力学,从而获得了优异的比电容、库仑效率和循环稳定性。NC/Ni-NiS/CNTs在1 A/g时的比电容为1489.9 F/g,在10 A/g时仍保持800 F/g,显示出良好的倍率性能。

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