通过ReSe/MoTe范德华异质结构实现从可见光到短波红外光的增强光探测范围
Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe/MoTe van der Waals Heterostructure.
作者信息
Lin Zhitao, Zhu Wenbiao, Zeng Yonghong, Shu Yiqing, Hu Haiguo, Chen Weicheng, Li Jianqing
机构信息
School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, China.
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, China.
出版信息
Nanomaterials (Basel). 2022 Aug 3;12(15):2664. doi: 10.3390/nano12152664.
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe/p-MoTe) photodetector for high-performance photodetection in the broadband spectral range of 405-2000 nm. Due to the low Schottky barrier contact of the ReSe/MoTe heterojunction, the rectification ratio (RR) of ~10 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 10 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550-2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
II型垂直异质结是长波长光探测的良好解决方案。在此，我们报道了一种用于在405 - 2000 nm宽带光谱范围内进行高性能光电探测的硒化铼/碲化钼（n-ReSe/p-MoTe）光电探测器。由于ReSe/MoTe异质结的肖特基势垒接触较低，在±5 V时实现了约10的整流比（RR）。此外，该光电探测器在655 nm入射光照射下可获得最大响应度（R = 1.05 A/W）和比探测率（D* = 6.66×10琼斯）。当入射波长为1550 - 2000 nm时，由于载流子的层间跃迁会产生光电流。这种紧凑的系统为实现宽带红外光电探测提供了机会。
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