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用于提高电荷载流子分离效率的BiMoO/BiVO/g-CN I型异质结构中电子传输通道的构建。

Construction of electron transport channels in type-I heterostructures of BiMoO/BiVO/g-CN for improved charge carriers separation efficiency.

作者信息

Wang Qiming, Zhang Yujia, Li Jinglin, Liu Na, Jiao Yuefeng, Jiao Zhengbo

机构信息

Institute of Materials for Energy and Environment, and College of Material Science and Engineering, Qingdao University, Qingdao 266071, China.

Institute of Materials for Energy and Environment, and College of Material Science and Engineering, Qingdao University, Qingdao 266071, China.

出版信息

J Colloid Interface Sci. 2020 May 1;567:145-153. doi: 10.1016/j.jcis.2020.02.003. Epub 2020 Feb 5.

DOI:10.1016/j.jcis.2020.02.003
PMID:32045736
Abstract

In this work, flower-like BiMoO nanoparticles grown on FTO substrates were firstly fabricated using a seed-free hydrothermal method. The BiMoO nanoflowers exhibited, to the best of our knowledge, higher photoelectrochemical (PEC) performances than other previously reported morphologies. It is generally accepted that the formation of type-I heterostructures is unfavorable for PEC applications. Nevertheless, in this work, we have successfully constructed a novel type-I architecture with numerous electron transport channels. In this unique BiMoO/BiVO structure, BiVO films were continuously distributed on both the surfaces and the interstices of BiMoO nanoflowers. Interconnected BiVO nanoparticles could intimately contact with FTO substrates and thus constitute the electron transport channels, which could promptly transfer electrons to FTO substrates. Simultaneously, a cocatalyst of g-CN was modified on the surfaces of BiVO to capture the photogenerated holes. As a result, the PEC activities of BiMoO/BiVO heterostructures were significantly improved due to the enhanced charge carriers separation efficiency. The special design of electron transport channel may provide a universal strategy to address the intrinsic drawbacks of type-I heterostructures.

摘要

在这项工作中,首先采用无籽水热法在FTO衬底上制备了生长有花状BiMoO纳米颗粒。据我们所知,BiMoO纳米花表现出比其他先前报道的形貌更高的光电化学(PEC)性能。一般认为,I型异质结构的形成不利于PEC应用。然而,在这项工作中,我们成功构建了一种具有众多电子传输通道的新型I型结构。在这种独特的BiMoO/BiVO结构中,BiVO薄膜连续分布在BiMoO纳米花的表面和间隙中。相互连接的BiVO纳米颗粒可以与FTO衬底紧密接触,从而构成电子传输通道,能够迅速将电子转移到FTO衬底上。同时,在BiVO表面修饰了g-CN助催化剂以捕获光生空穴。结果,由于电荷载流子分离效率的提高,BiMoO/BiVO异质结构的PEC活性得到显著提高。电子传输通道的特殊设计可能为解决I型异质结构的固有缺点提供一种通用策略。

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