Velpula Ravi Teja, Jain Barsha, Philip Moab Rajan, Nguyen Hoang Duy, Wang Renjie, Nguyen Hieu Pham Trung
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City, 700000, Vietnam.
Sci Rep. 2020 Feb 13;10(1):2547. doi: 10.1038/s41598-020-59442-0.
We report the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the ultraviolet wavelength range. During epitaxial growth of the AlInN layer, an AlInN shell is spontaneously formed, resulting in reduced nonradiative recombination on the nanowire surface. The AlInN nanowires exhibit a high internal quantum efficiency of ~52% at room temperature for emission at 295 nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth conditions. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded, which is ~4 times stronger than the transverse electric (TE) polarized light at 295 nm. This study provides an alternative approach for the fabrication of new types of high-performance ultraviolet light emitters.
我们报道了首个轴向AlInN紫外核壳纳米线发光二极管的展示，其在紫外波长范围内具有高度稳定的发射。在AlInN层的外延生长过程中，自发形成了一个AlInN壳层，从而减少了纳米线表面的非辐射复合。AlInN纳米线在室温下对于295nm发射表现出约52%的高内部量子效率。通过改变生长条件，峰值发射波长可在290nm至355nm之间变化。此外，记录到显著强烈的横向磁（TM）偏振发射，在295nm处其比横向电（TE）偏振光强约4倍。这项研究为制造新型高性能紫外发光器提供了一种替代方法。
