石墨烯驱动的AlN薄膜及深紫外光电器件新型应变弛豫
Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices.
作者信息
Nguyen Hieu P T
机构信息
New Jersey Institute of Technology, Department of Electrical & Computer Engineering, Newark, NJ, 07102, USA.
出版信息
Light Sci Appl. 2022 May 30;11(1):164. doi: 10.1038/s41377-022-00861-1.
Abstract
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
摘要
石墨烯驱动的应变预存储工程实现了用于深紫外发光二极管的低位错密度无应变氮化铝薄膜的外延生长，并且揭开了准范德华外延中独特的应变弛豫机制。
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本文引用的文献
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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
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2
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.基于氮化铝镓的日盲紫外光电探测器及焦平面阵列的研究进展
Light Sci Appl. 2021 Apr 30;10(1):94. doi: 10.1038/s41377-021-00527-4.
3
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum.基于AlInN的核壳纳米线发光二极管在紫外光谱中的外延生长与表征
Sci Rep. 2020 Feb 13;10(1):2547. doi: 10.1038/s41598-020-59442-0.
4
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.石墨烯辅助的向无位错异质外延的自发弛豫。
Nat Nanotechnol. 2020 Apr;15(4):272-276. doi: 10.1038/s41565-020-0633-5. Epub 2020 Feb 10.
5
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.波长为210纳米的氮化铝发光二极管。
Nature. 2006 May 18;441(7091):325-8. doi: 10.1038/nature04760.
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