• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

相似文献

1
Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices.石墨烯驱动的AlN薄膜及深紫外光电器件新型应变弛豫
Light Sci Appl. 2022 May 30;11(1):164. doi: 10.1038/s41377-022-00861-1.
2
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
Light Sci Appl. 2022 Apr 7;11(1):88. doi: 10.1038/s41377-022-00756-1.
3
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.石墨烯助力深紫外发光二极管的AlN薄膜外延生长改进
Adv Mater. 2019 Jun;31(23):e1807345. doi: 10.1002/adma.201807345. Epub 2019 Apr 16.
4
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes.用于紫外发光二极管的纳米图案蓝宝石衬底上AlN薄膜的石墨烯辅助准范德华外延生长
J Vis Exp. 2020 Jun 25(160). doi: 10.3791/60167.
5
Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.基于AlGaN的深紫外发光二极管在蓝宝石衬底上通过纳米级厚度的AlN成核层实现高质量无裂纹AlN薄膜的异质外延生长。
Nanomaterials (Basel). 2019 Nov 17;9(11):1634. doi: 10.3390/nano9111634.
6
Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.作者更正：石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延
Light Sci Appl. 2022 Apr 29;11(1):119. doi: 10.1038/s41377-022-00802-y.
7
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.在石墨烯缓冲蓝宝石上无应变AlN的快速生长。
J Am Chem Soc. 2018 Sep 26;140(38):11935-11941. doi: 10.1021/jacs.8b03871. Epub 2018 Sep 17.
8
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices.衬底效应对 GaN/AlN 短周期超晶格中应变弛豫的影响。
Nanoscale Res Lett. 2012 Jun 6;7(1):289. doi: 10.1186/1556-276X-7-289.
9
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.石墨烯辅助的向无位错异质外延的自发弛豫。
Nat Nanotechnol. 2020 Apr;15(4):272-276. doi: 10.1038/s41565-020-0633-5. Epub 2020 Feb 10.
10
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.在外延生长的WS₂上直接进行无裂纹AlN薄膜的范德华外延生长。
Materials (Basel). 2018 Dec 4;11(12):2464. doi: 10.3390/ma11122464.

本文引用的文献

1
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
Light Sci Appl. 2022 Apr 7;11(1):88. doi: 10.1038/s41377-022-00756-1.
2
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.基于氮化铝镓的日盲紫外光电探测器及焦平面阵列的研究进展
Light Sci Appl. 2021 Apr 30;10(1):94. doi: 10.1038/s41377-021-00527-4.
3
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum.基于AlInN的核壳纳米线发光二极管在紫外光谱中的外延生长与表征
Sci Rep. 2020 Feb 13;10(1):2547. doi: 10.1038/s41598-020-59442-0.
4
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.石墨烯辅助的向无位错异质外延的自发弛豫。
Nat Nanotechnol. 2020 Apr;15(4):272-276. doi: 10.1038/s41565-020-0633-5. Epub 2020 Feb 10.
5
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.波长为210纳米的氮化铝发光二极管。
Nature. 2006 May 18;441(7091):325-8. doi: 10.1038/nature04760.

石墨烯驱动的AlN薄膜及深紫外光电器件新型应变弛豫

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices.

作者信息

Nguyen Hieu P T

机构信息

New Jersey Institute of Technology, Department of Electrical & Computer Engineering, Newark, NJ, 07102, USA.

出版信息

Light Sci Appl. 2022 May 30;11(1):164. doi: 10.1038/s41377-022-00861-1.

DOI:10.1038/s41377-022-00861-1
PMID:35637198
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9151680/
Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

摘要

石墨烯驱动的应变预存储工程实现了用于深紫外发光二极管的低位错密度无应变氮化铝薄膜的外延生长，并且揭开了准范德华外延中独特的应变弛豫机制。