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用于高效光电化学水氧化的硅光阳极表面镍铁磷合金的化学镀

Electroless Plating of NiFeP Alloy on the Surface of Silicon Photoanode for Efficient Photoelectrochemical Water Oxidation.

作者信息

Li Fusheng, Li Yingzheng, Zhuo Qiming, Zhou Dinghua, Zhao Yilong, Zhao Ziqi, Wu Xiujuan, Shan Yu, Sun Licheng

机构信息

State Key Laboratory of Fine Chemicals, Institute of Artificial Photosynthesis, DUT-KTH Joint Education and Research Centre on Molecular Devices, Institute for Energy Science and Technology, Dalian University of Technology, Dalian 116024, China.

Department of Chemistry, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Stockholm 10044, Sweden.

出版信息

ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11479-11488. doi: 10.1021/acsami.9b19418. Epub 2020 Feb 25.

DOI:10.1021/acsami.9b19418
PMID:32056436
Abstract

-type silicon is a kind of semiconductor with a narrow band gap that has been reported as an outstanding light-harvesting material for photoelectrochemical (PEC) reactions. Decorating a thin catalyst layer on the -type silicon surface can provide a direct and effective route toward PEC water oxidation. However, most of catalyst immobilization methods for reported -type silicon photoanodes have been based on energetically demanding, time-consuming, and high-cost processes. Herein, a high-performance NiFeP alloy ()-decorated -type micro-pyramid silicon array () photoanode () was prepared by a fast and low-cost electroless deposition method for light-driven water oxidation reaction. The saturated photocurrent density of can reach up to ∼40 mA cm, and a photocurrent density of 15.5 mA cm can be achieved at 1.23 V under light illumination (100 mW cm, AM1.5 filter), which is one of the most promising silicon-based photoanodes to date. The kinetic studies showed that the on the silicon photoanodes could significantly decrease the interfacial charge recombination between the -type silicon surface and electrolyte.

摘要

p型硅是一种具有窄带隙的半导体,已被报道为用于光电化学(PEC)反应的出色光捕获材料。在p型硅表面修饰一层薄催化剂层可为PEC水氧化提供一条直接有效的途径。然而,报道的用于p型硅光阳极的大多数催化剂固定方法都基于高能量需求、耗时且成本高的过程。在此,通过一种快速且低成本的化学沉积方法制备了一种高性能的NiFeP合金()修饰的p型微金字塔硅阵列()光阳极(),用于光驱动水氧化反应。其饱和光电流密度可达约40 mA cm,在光照(100 mW cm,AM1.5滤光片)下1.23 V时可实现15.5 mA cm的光电流密度,这是迄今为止最有前景的硅基光阳极之一。动力学研究表明,硅光阳极上的 可显著降低p型硅表面与电解质之间的界面电荷复合。

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