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拓扑优化的硅基双模4×4电光开关。

Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch.

作者信息

Niu Jiaqi, Yang Shanglin, Zhou Ting, Jia Hao, Fu Xin, Zhao Zhizun, Li Zhen, Zhang Gaolu, Chen Changhua, Yang Lin

机构信息

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Nanophotonics. 2022 Nov 4;11(21):4869-4878. doi: 10.1515/nanoph-2022-0259. eCollection 2022 Dec.

Abstract

Silicon-based optical switch is one of the key components for on-chip optical interconnect systems, and mode division multiplexing technology has been employed to boost optical switches' channel capacity. However, the majority of the proven multimode optical switches have a switching time in the microsecond range, which is insufficient for some applications. In this paper, we design and experimentally demonstrate a high-speed dual-mode 4 × 4 optical switch based on a mode-diversity scheme, composed of four pairs of mode multiplexers and de-multiplexers, and two optimized single-mode 4 × 4 optical switches. Fast switching is enabled based on the carrier dispersion effect. At the same time, we improve the performances of the optical switch by reducing the number of optical switch units used in the 4 × 4 Spanke-Beneš architecture. Its power consumptions are reduced by ∼17%. Its insertion losses are within 8.8 dB in the wavelength range of 1525-1565 nm in the both sates of "through" and "all-cross", while the optical signal-to-noise ratios are larger than 12.8 dB. Also, 50 Gbps data transmission experiments verify the device's data transmission functionality.

摘要

硅基光开关是片上光互连系统的关键组件之一,模式分割复用技术已被用于提高光开关的通道容量。然而,大多数已被验证的多模光开关的开关时间在微秒范围内,这对于某些应用来说是不够的。在本文中,我们设计并通过实验演示了一种基于模式分集方案的高速双模4×4光开关,它由四对模式复用器和解复用器以及两个优化的单模4×4光开关组成。基于载流子色散效应实现了快速开关。同时,我们通过减少4×4 Spanke-Beneš架构中使用的光开关单元数量来提高光开关的性能。其功耗降低了约17%。在“直通”和“全交叉”两种状态下,其在1525 - 1565 nm波长范围内的插入损耗均在8.8 dB以内,而光信噪比大于12.8 dB。此外,50 Gbps数据传输实验验证了该器件的数据传输功能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d318/11501402/05c1a7a200ff/j_nanoph-2022-0259_fig_001.jpg

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