Dong Changshuai, Meng Bin, Liu Jun, Wang Lixiang
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China.
University of Science and Technology of China, Hefei 230026, P. R. China.
ACS Appl Mater Interfaces. 2020 Mar 4;12(9):10428-10433. doi: 10.1021/acsami.9b21527. Epub 2020 Feb 21.
Only very few conjugated polymers can be n-doped for thermoelectric applications. In this work, for the first time, we report that incorporation of Boron-Nitrogen coordination bond (B ← N unit) to a donor-acceptor (D-A) type conjugated polymer enable n-doping for thermoelectric application. The incorporation of B ← N unit into the polymer backbone leads to not only a downshift of LUMO/HOMO energy levels by 0.27 eV/0.33 eV, but also diminished intramolecular D-A character of the polymer backbone. As a result, while the control polymer cannot be n-doped, the polymer containing B ← N unit (PI-BN) can be n-doped by 4-(1,3-dimethyl-2,3-dihydro-1-benzoimidazol-2-yl)-,-dimethylaniline (DMBI). Finally, PI-BN exhibits an electrical conductivity (σ) of 0.97 × 10 S cm, Seebeck coefficient (S) of -453.8 μV K, and power factor (PF) of 0.02 μW m K when doped with 5 wt % DMBI. A great advantage of PI-BN is its excellent miscibility with the n-dopant because of its amorphous nature and large pendent substituents. This work indicates that organoboron polymers can be n-doped and can be used for thermoelectrics.
只有极少数共轭聚合物可用于热电应用的n型掺杂。在本工作中,我们首次报道,将硼氮配位键(B←N单元)引入给体-受体(D-A)型共轭聚合物可实现用于热电应用的n型掺杂。将B←N单元引入聚合物主链不仅使最低未占分子轨道(LUMO)/最高已占分子轨道(HOMO)能级下移0.27电子伏特/0.33电子伏特,还减弱了聚合物主链的分子内D-A特性。结果,对照聚合物无法进行n型掺杂,而含B←N单元的聚合物(PI-BN)可通过4-(1,3-二甲基-2,3-二氢-1-苯并咪唑-2-基)-N,N-二甲基苯胺(DMBI)进行n型掺杂。最终,当用5 wt%的DMBI掺杂时,PI-BN的电导率(σ)为0.97×10 S cm,塞贝克系数(S)为-453.8微伏K,功率因子(PF)为0.02微瓦米K。PI-BN的一大优势是因其无定形性质和大的侧基取代基,它与n型掺杂剂具有优异的混溶性。这项工作表明有机硼聚合物可进行n型掺杂并可用于热电学。