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单层MoS和ReS在SiO/Si及石英衬底上反射光谱的偏振特性

The Polarization Properties of the Reflection Spectra of Single-Layer MoS and ReS on SiO/Si and Quartz Substrates.

作者信息

Shi Yafang, Wang Longlong, Qiao Xiaofen, Li Shuai, Liu Yi, Li Xiaoli, Zhao Xiaohui

机构信息

National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.

出版信息

Nanoscale Res Lett. 2020 Feb 17;15(1):43. doi: 10.1186/s11671-020-3280-8.

DOI:10.1186/s11671-020-3280-8
PMID:32067107
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7026318/
Abstract

MoS and ReS are typical transition metal chalcogenides with many excellent electrical and optical properties. Due to different lattice symmetries, ReS offers one more dimension than MoS to tune its physical properties. In this paper, we studied the polarized reflection spectra in single-layer MoS and ReS. The explicit difference identifies strong angle-dependent properties in single-layer ReS distinct from single-layer MoS. The results of samples on both SiO/Si substrate and quartz substrate show single-layer ReS is in-plane anisotropic and the change period of reflection intensity is estimated with the polarization angles.

摘要

二硫化钼(MoS)和二硫化铼(ReS)是典型的过渡金属硫族化合物,具有许多优异的电学和光学性质。由于晶格对称性不同,二硫化铼比二硫化钼多一个维度来调节其物理性质。在本文中,我们研究了单层二硫化钼和二硫化铼的偏振反射光谱。明显的差异表明单层二硫化铼具有与单层二硫化钼不同的强烈角度依赖性特性。在二氧化硅/硅衬底和石英衬底上的样品结果表明,单层二硫化铼是面内各向异性的,并且用偏振角估计了反射强度的变化周期。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/a411dd8f071a/11671_2020_3280_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/93b454aa01de/11671_2020_3280_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/a372122b61c6/11671_2020_3280_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/58db93a4da55/11671_2020_3280_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/a411dd8f071a/11671_2020_3280_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/93b454aa01de/11671_2020_3280_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/a372122b61c6/11671_2020_3280_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/58db93a4da55/11671_2020_3280_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/360a/7026318/a411dd8f071a/11671_2020_3280_Fig4_HTML.jpg

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本文引用的文献

1
Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.二维层状二硫化铼中的多型性和意想不到的强层间耦合
Nanoscale. 2016 Apr 21;8(15):8324-32. doi: 10.1039/c6nr01569g.
2
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.基于二维各向异性二硫化铼场效应晶体管的集成数字逆变器。
Nat Commun. 2015 May 7;6:6991. doi: 10.1038/ncomms7991.
3
An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.二维 VI 族过渡金属二卤族化合物的光学光谱研究。
Chem Soc Rev. 2015 May 7;44(9):2629-42. doi: 10.1039/c4cs00265b. Epub 2015 Apr 21.
4
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.二维过渡金属二卤族化合物的电子学和光电学。
Nat Nanotechnol. 2012 Nov;7(11):699-712. doi: 10.1038/nnano.2012.193.
5
Atomically thin MoS₂: a new direct-gap semiconductor.原子级薄的 MoS₂:一种新型直接带隙半导体。
Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805.