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钛酸铅钯:一种室温纳米级多铁性薄膜。

Lead palladium titanate: A room temperature nanoscale multiferroic thin film.

作者信息

Mishra K K, Instan Alvaro A, Kumari Shalini, Scott J F, Katiyar Ram S

机构信息

Department of Physics and Institute for Functional Nanomaterials, P.O. Box 70377, University of Puerto Rico, San Juan, PR, 00936-8377, USA.

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.

出版信息

Sci Rep. 2020 Feb 19;10(1):2991. doi: 10.1038/s41598-020-59961-w.

Abstract

The discovery of single-phase multiferroic materials and the understanding of coupling mechanisms between their spin and polarization is important from the point of view of next generation logic and memory devices. Herein we report the fabrication, dielectric, ferroelectric, piezo-response force microscopy, and magnetization measurements of Pd-substituted room-temperature magnetoelectric multiferroic PbPdTiO (PbPdT) thin films. Highly oriented PbPdT thin films were deposited on {(LaAlO)(SrAlTaO)} (LSAT) substrates in oxygen atmosphere using pulsed laser deposition technique. X-ray diffraction studies revealed that the films had tetragonal phase with (001) orientation. Surface morphology studies using atomic force and scanning electron microscopy suggest a smooth and homogeneous distribution of grains on the film surface with roughness ~2 nm. A large dielectric constant of ~1700 and a low-loss tangent value of ~0.3 at 10 kHz were obtained at room temperature. Temperature dependent dielectric measurements carried out on Pt/PbPdT/LaSrMnO (LSMO) metal-dielectric-metal capacitors suggest a ferroelectric to paraelectric transition above 670 K. The measured polarization hysteresis loops at room temperature were attributed to its ferroelectric behavior. From a Tauc plot of (αhν) versus energy, the direct band gap E of PbPdT thin films was calculated as 3 eV. Ferroelectric piezoelectric nature of the films was confirmed from a strong domain switching response revealed from piezo-response force microscopy. A well-saturated magnetization M-H loop with remanent magnetization of 3.5 emu/cm was observed at room temperature, and it retains ferromagnetic ordering in the temperature range 5-395 K. Origin of the magnetization could be traced to the mixed oxidation states of Pd/Pd dispersed in polar PbTiO matrix, as revealed by our x-ray photoelectron spectroscopic results. These results suggest that PbPdT thin films are multiferroic (ferroelectric-ferromagnetic) at room temperature.

摘要

从下一代逻辑和存储设备的角度来看,单相多铁性材料的发现以及对其自旋与极化之间耦合机制的理解非常重要。在此,我们报告了钯取代的室温磁电多铁性PbPdTiO(PbPdT)薄膜的制备、介电、铁电、压电响应力显微镜和磁化测量。采用脉冲激光沉积技术在氧气气氛中,将高度取向的PbPdT薄膜沉积在{(LaAlO)(SrAlTaO)}(LSAT)衬底上。X射线衍射研究表明,这些薄膜具有(001)取向的四方相。使用原子力显微镜和扫描电子显微镜进行的表面形貌研究表明,薄膜表面的晶粒分布均匀且光滑,粗糙度约为2纳米。在室温下,在10kHz时获得了约1700的大介电常数和约0.3的低损耗正切值。在Pt/PbPdT/LaSrMnO(LSMO)金属-电介质-金属电容器上进行的与温度相关的介电测量表明,在670K以上发生铁电到顺电的转变。在室温下测量的极化磁滞回线归因于其铁电行为。根据(αhν)与能量的Tauc图,计算出PbPdT薄膜的直接带隙E为3eV。压电响应力显微镜显示的强畴切换响应证实了薄膜的铁电压电性质。在室温下观察到一个剩余磁化强度为3.5 emu/cm的良好饱和磁化M-H回线,并且在5-395K的温度范围内保持铁磁有序。正如我们的X射线光电子能谱结果所示,磁化的起源可追溯到分散在极性PbTiO基体中的Pd/Pd的混合氧化态。这些结果表明,PbPdT薄膜在室温下是多铁性(铁电-铁磁)的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/492d/7031505/465915ead005/41598_2020_59961_Fig1_HTML.jpg

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