Zhao Tianshuo, Goodwin Earl D, Guo Jiacen, Wang Han, Diroll Benjamin T, Murray Christopher B, Kagan Cherie R
Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical and Systems Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.
ACS Nano. 2016 Oct 25;10(10):9267-9273. doi: 10.1021/acsnano.6b03175. Epub 2016 Sep 22.
Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.
需要先进的架构来进一步提高胶体硫化铅异质结量子点太阳能电池的性能。在此，我们在太阳能电池的氧化锌纳米颗粒与硫化铅量子点之间的结处引入了经碘化镉处理的硒化镉量子点缓冲层。我们利用硒化镉量子点的表面和尺寸可调电子特性来优化其在异质结中的载流子浓度和能带排列。我们结合光学、电学和分析测量结果表明，硒化镉量子点缓冲层抑制了界面复合，并贡献了额外的光生载流子，提高了硫化铅量子点太阳能电池的开路电压和短路电流，使太阳能功率转换效率提高了25%。
